Process-Induced Defects in InP Caused by Chemical Vapor Deposition of Surface Passivation Dielectrics
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概要
- 論文の詳細を見る
Near-surface defects of InP produced during three different chemical vapor deposition (CVD) processes were systematically characterized by capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) techniques. Deposition of plasma-enhanced CVD (PECVD) phosphosilicate glass (PSG) and SiO_2 films produced the same bulk level, lying at 0.35 eV below the conduction band edge, near the surface region of InP. Such a level was absent in the samples prepared by the photo CVD process. In addition, the photo CVD process gave a lower density of interface states than the PECVD process. The origin of the bulk trap and the energy- and space-distributed nature of interface states are discussed.
- 社団法人応用物理学会の論文
- 1994-01-30
著者
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HASHIZUME Tamotsu
Hokkaido University
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HASEGAWA Hideki
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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HARTNAGEL Hans
Institut fur Hochfrequenztechnik, Fachbereich Elektrotechnik und Informationstechnik, TU Darmstadt
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Hashizume Tamotsu
Hokkaido Polytechnic College
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Hartnagel H
Th Darmstadt Darmstadt Deu
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Hartnagel Hans
Institut Fur Hochfrequenztechnik Fachbereich Elektrotechnik Und Informationstechnik Tu Darmstadt
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RIEMENSCHNEIDER Rolf
Institut fur Hochfrequentztechnik, Technische Hochschule Darmstadt
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Riemenschneider Rolf
Institut Fur Hochfrequentztechnik Technische Hochschule Darmstadt
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Hasegawa Hideki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan
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HARTNAGEL Hans
Institut fur Hochfrequentztechnik, Technische Hochschule Darmstadt
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- FOREWORD