Stable Passivation Systems for GaAs Prepared by Room-Temperature Deposition of SiO_2 Films

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1994-07-15

著者

• HASHIZUME Tamotsu

  Hokkaido University

• Hashizume Tamotsu

  Hokkaido Polytechnic College

• Yoshino Masaki

  Hokkaido Polytechnic College

• SHIMOZUMA Mitsuo

  College of Medical Technology, Hokkaido University

• ISHIKAWA Motohiro

  Department of Electrical Engineering, Faculty of Engineering, Hokkaido University

• Shimozuma Mitsuo

  College Of Medical Technology Hokkaido University

• Ishikawa Motohiro

  Department Of Electrical Engineering Faculty Of Engineering Hokkaido University

関連論文

• Fabrication and Characterization of Active and Sequential Circuits Utilizing Schottky-Wrap-Gate-Controlled GaAs Hexagonal Nanowire Network Structures
• 2-bit Arithmetic Logic Unit Utilizing Hexagonal BDD Architecture for Implementation of Nanoprocessor on GaAs Nanowire Network(Session4B: Emerging Devices II)
• Fabrication and Characterization of Active and Sequential Circuits Utilizing Schottky-Wrap-Gate-Controlled GaAs Hexagonal Nanowire Network Structures
• Formation of Oxide-Free Nearly Ideal Pt/GaAs Schottky Barriers by Novel In Situ Photopulse - Assisted Electrochemical Process
• Ionization Coefficient in Gases under Nonuniform Electric Fields
• Modeling of the electron kinetics in proportional counters
• Stable Passivation Systems for GaAs Prepared by Room-Temperature Deposition of SiO_2 Films
• Process-Induced Defects in InP Caused by Chemical Vapor Deposition of Surface Passivation Dielectrics
• Deep Level Characterization of Submillimeter-Wave GaAs Schottky Diodes Produced by a Novel In-Situ Electrochemical Process
• Properties of TiN Films on Heated Substrate Below 550℃ by 50 Hz Plasma-Enhanced Chemical Vapor Deposition
• Annealing Behavior of HF-Treated GaAs Capped with SiO_2 Films Prepared by 50-Hz Plasma-Assisted Chemical Vapor Deposition
• FOREWORD

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