HASHIZUME Tamotsu | Hokkaido University
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概要
関連著者
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HASHIZUME Tamotsu
Hokkaido University
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Hashizume Tamotsu
Hokkaido Polytechnic College
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KASAI Seiya
Hokkaido University
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HASEGAWA Hideki
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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Hasegawa Hideki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan
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ZHAO Hong-Quan
Hokkaido University
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WU Nan-Jian
Institute of Semiconductors, Chinese Academy of Sciences
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葛西 誠也
Research Center For Integrated Quantum Electronics And Graduate School Of Information Science And Te
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Wu N‐j
Hokkaido Univ. Sapporo Jpn
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Wu N‐j
Univ. Aizu Fukushima Jpn
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Wu Nan-jian
The University Of Electro-communications
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Hashizume Tomihiro
Institute For Materials Research (imr) Tohoku University:(present Address)advanced Research Laborato
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HARTNAGEL Hans
Institut fur Hochfrequenztechnik, Fachbereich Elektrotechnik und Informationstechnik, TU Darmstadt
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Kasai S
Graduate School Of Environmental Earth Science Hokkaido University
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Hartnagel H
Th Darmstadt Darmstadt Deu
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Hartnagel Hans
Institut Fur Hochfrequenztechnik Fachbereich Elektrotechnik Und Informationstechnik Tu Darmstadt
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics And Graduate School Of Information Science &
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HARTNAGEL Hans
Institut fur Hochfrequentztechnik, Technische Hochschule Darmstadt
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HASHIZUME Tamotsu
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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KASAI Seiya
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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ZHAO Hong-Quan
Research Center for Integrated Quantum Electronics, Hokkaido University
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics Hokkaido University
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Wu Nan-jian
Institute Of Semiconductor Chinese Academy Of Science
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WU Nan-Jian
Research Center for Interface Quantum Electronics, Hokkaido University
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SAWADA Takayuki
Research Center for Interface Quantum Electronics, Hokkaido University
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Yoshino Masaki
Hokkaido Polytechnic College
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SHIMOZUMA Mitsuo
College of Medical Technology, Hokkaido University
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ISHIKAWA Motohiro
Department of Electrical Engineering, Faculty of Engineering, Hokkaido University
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RIEMENSCHNEIDER Rolf
Institut fur Hochfrequentztechnik, Technische Hochschule Darmstadt
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GRUB Andreas
Institut fur Hochfrequentztechnik, Technische Hochschule Darmstadt
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Grub Andreas
Institut Fur Hochfrequentztechnik Technische Hochschule Darmstadt
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Shimozuma Mitsuo
College Of Medical Technology Hokkaido University
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Sawada Takayuki
Research Center For Interface Quantum Electronics Hokkaido University
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Riemenschneider Rolf
Institut Fur Hochfrequentztechnik Technische Hochschule Darmstadt
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Ishikawa Motohiro
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University
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Wu Nan-jian
Institute Of Semiconductors Chinese Academy Of Sciences
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Kasai Seiya
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Sapporo 060-8628, Japan
著作論文
- Fabrication and Characterization of Active and Sequential Circuits Utilizing Schottky-Wrap-Gate-Controlled GaAs Hexagonal Nanowire Network Structures
- 2-bit Arithmetic Logic Unit Utilizing Hexagonal BDD Architecture for Implementation of Nanoprocessor on GaAs Nanowire Network(Session4B: Emerging Devices II)
- Fabrication and Characterization of Active and Sequential Circuits Utilizing Schottky-Wrap-Gate-Controlled GaAs Hexagonal Nanowire Network Structures
- Formation of Oxide-Free Nearly Ideal Pt/GaAs Schottky Barriers by Novel In Situ Photopulse - Assisted Electrochemical Process
- Stable Passivation Systems for GaAs Prepared by Room-Temperature Deposition of SiO_2 Films
- Process-Induced Defects in InP Caused by Chemical Vapor Deposition of Surface Passivation Dielectrics
- Deep Level Characterization of Submillimeter-Wave GaAs Schottky Diodes Produced by a Novel In-Situ Electrochemical Process
- FOREWORD