Hashizume Tamotsu | Research Center For Integrated Quantum Electronics Hokkaido University
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関連著者
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics Hokkaido University
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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HASEGAWA Hideki
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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Hasegawa Hideki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan
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Sato T
Hokkaido Univ. Sapporo Jpn
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Sato Taketomo
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Sato Taketomo
Graduate School Of Electronics And Information Engineering And Research Center For Integrated Quantu
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KASAI Seiya
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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SATO Taketomo
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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Sato Taketomo
Hokkaido Univ. Sapporo Jpn
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葛西 誠也
Research Center For Integrated Quantum Electronics And Graduate School Of Information Science And Te
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Sato Taketomo
Research Center For Integrated Quantum Electronics Hokkaido University
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Kasai Seiya
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Sapporo 060-8628, Japan
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OKADA Hiroshi
Research Center for Interface Quantum Electronics (RCIQE) and Graduate School of Electronics and Inf
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HASHIZUME Tamotsu
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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長谷川 英機
北海道大学量子集積エレクトロニクス研究センター
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Hashizume T
Advanced Research Laboratory Hitachi Ltd.:department Of Physics Tokyo Institute Of Technology
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Kasai S
Graduate School Of Environmental Earth Science Hokkaido University
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Okada H
Botanical Gardens Faculty Of Science Osaka City University
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Hasegawa Hideki
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University:department Of Electr
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岡崎 拓行
北海道大学量子集積エレクトロニクス研究センター
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Hasegawa H
自治医科大学 臨床検査医学
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Yoshida T
Department Of Electronic Engineering Faculty Of Engineering Takushoku University
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Yoshida Tomio
Information Equipment Research Laboratory Matsushita Electric Industrial Co. Ltd.
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YOSHIDA Toshiyuki
Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information
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OKAZAKI Hiroyuki
Research Center for Integrated Quantum Electronics, Hokkaido University
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YOSHIZAWA Naoki
Research Center for Integrated Quantum Electronics, Hokkaido University
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Yoshida Tomoaki
Department Of Materials Science Faculty Of Engineering Tohoku University
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Yoshida Toshiyuki
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Yoshida T
Matsushita Electric Co. Tochigi Jpn
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Yoshida T
Fukuoka Univ. Fukuoka Jpn
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Okazaki Hiroyuki
Research Center For Integrated Quantum Electronics Hokkaido University
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Yoshizawa Naoki
Research Center for Integrated Quantum Electronics, and Graduate School of Information Science and Technology, Hokkaido University, N-13, W-8, Kita-ku, Sapporo 060-8628, Japan
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Hasegawa Hideki
Research Center For Interface Quantum Electronics And Faculty Of Engineering Hokkaido University:fac
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Ootomo Shinya
Research Center For Integrated Quantum Electronics And Graduate School Of Electronics And Informatio
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Ootomo Shin-ya
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Electronics And In
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KIMURA Takeshi
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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Ooyama Kimihito
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Scienc
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Koyanagi S
Hokkaido Univ. Sapporo Jpn
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Kodama S
Ntt Photonics Lab. Kanagawa Jpn
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TAKAHASHI Hiroshi
Research Center for Integrated Quantum Electronics, and Graduate School of Electronics and Informati
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OKADA HIROSHI
Botanical Gardens, Faculty of Science, Osaka City University
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Jinushi Kei-ichiroh
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Honda Hideyuki
The Faculty Of Medical Science And Welfare Tohoku Bunka Gakuen University
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葛西 誠也
北海道大学大学院情報科学研究科・量子集積エレクトロニクス研究センター:jstさきがけ
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Kodama Satoshi
Research Institute Of Innovative Technology For The Earth
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Hashizume Tomihiro
Institute For Materials Research (imr) Tohoku University:(present Address)advanced Research Laborato
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MIZOHATA Akinori
Research Center for Integrated Quantum Electronics, Hokkaido University
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Kodama Satoshi
Research Center For Interface Quantum Electronics And Department Of Electrical Engineering Hokkaido
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JINUSHI Kei-ichiroh
Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information
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Kimura Takeshi
Research Center For Integrated Quantum Electronics (rciqe) Hokkaido University
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics And Graduate School Of Information Science &
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Kimura Takeshi
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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葛西 誠也
北海道大学大学院情報科学研究科
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ISHIKAWA Yasuhiko
Research Institute of Electronics, Shizuoka University
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Ishikawa Yasuhiko
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Mizue Chihoko
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Scienc
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Hori Yujin
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Scienc
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ZHAO Hong-Quan
Research Center for Integrated Quantum Electronics, Hokkaido University
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KOTANI Junji
Research Center for Integrated Quantum Electronics and Graduate School of Information Science and Te
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Taketomi Hiroyuki
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University
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Miyake Hideto
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University
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Hiramatsu Kazumasa
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University
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Hashizume T
Research Center For Integrated Quantum Electronics And Graduate School Of Electronics And Informatio
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葛西 誠也
北海道大学大学院情報科学研究科:北海道大学量子集積エレクトロニクス研究センター:jstさきがけ
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Hashim Abdul
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Suzuki S
Nikon Corp. Tokyo Jpn
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Suzuki Setsuo
Energy And Mechanical Research Laboratories Research And Development Center Toshiba Corporation
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Suzuki S
Chiba Institute Of Technology
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Suzuki Suguru
Department Of Materials Science And Engineering Nagoya Institute Of Technology
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Yamada M
Mitsubishi Electric Corp. Itami‐shi Jpn
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Ishikawa Y
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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SUZUKI Satoshi
Research Institute of Angiocardiology and Cardiovascular Clinic,Faculty of Medicine,Kyushu Universit
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Ishikawa Y
Dowa Mining Co. Ltd. Tokyo
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Kotani Junji
Research Center For Integrated Quantum Electronics (rciqe) Hokkaido University
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FUJIKURA Hajime
Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information
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Ishikawa Y
Hokkaido Univ. Sapporo Jpn
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YAMADA Masatsugu
Research Center for Integrated Quantum Electronics, and Graduate School of Electronics and Informati
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Suzuki Susumu
Chiba Institute Of Technology
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Satoh Yoshihiro
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Koyanagi Satoshi
Research Center For Interface Quantum Electronics And Department Of Electrical Engineering Hokkaido
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics And Graduate School Of Information Science And Te
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藤倉 序章
北海道大学量子界面エレクトロニクス研究センター:電子情報工学専攻
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Miyake Hideto
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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Suzuki S
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Satoh Y
Tokyo Inst. Technol. Tokyo Jpn
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Hashizume Tamotsu
Res. Center For Integrated Quantum Electronics And Graduate School Of Information Sci. And Technol.
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Hashizume Tamotsu
Hokkaido Univ. Sapporo Jpn
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KATO Hiroki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Scienc
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MICZEK Marcin
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Scienc
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葛西 誠也
北海道大学 大学院情報科学研究科
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DOHMAE Yasuhiro
Research Center for Interface Quantum Electronics, and Graduate School of Electronics and Informatio
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Hiramatsu Kazumasa
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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葛西 誠也
北大院情報科学および量集センター:jstさきがけ
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Taketomi Hiroyuki
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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Miczek Marcin
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe):graduate School Of Information Science An
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Mizue Chihoko
Research Center For Integrated Quantum Electronics (rciqe):graduate School Of Information Science An
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Yamada M
Kanazawa Univ. Kanazawa‐shi Jpn
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Suzuki Setsu
School Of Science And Engineering Waseda University
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Ooyama Kimihito
Research Center For Integrated Quantum Electronics (rciqe):graduate School Of Information Science An
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Dohmae Yasuhiro
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Kato Hiroki
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe) Hokkaido University
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Hasegawa Hideki
Research Center For Integrated Quantum Electronics And Graduate School Of Electronics And Informatio
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Hori Yujin
Research Center For Integrated Quantum Electronics (rciqe):graduate School Of Information Science An
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Fujikura Hajime
Research Center for Interface Quantum Electronics and Graduate School of Electronics
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Fujikura Hajime
Research Center for Interface Quantum Electronics and Graduate School of
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Jinushi Kei-ichiroh
Research Center for Interface Quantum Electronics and Graduate School of
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KASAI Seiya
Hokkaido University
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HASHIZUME Tamotsu
Hokkaido University
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Ootomo Shinya
Yokohama R&d Laboratories The Furukawa Electric Co. Ltd.
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長谷川 英機
北海道大学工学部電気工学科
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Hozawa H
Department Of Biomedical Engineering Graduate School Of Biomedical Engineering Tohoku University
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TAMURA Takahiro
Research Center for Integrated Quantum Electronics and Graduate School of Information Science and Te
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Sugawara Katsuya
Research Center for Integrated Quantum Electronics and Graduate School of Information Science and Te
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Sakai T
Tokyo Inst. Technol. Kanagawa Jpn
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Kotani Junji
Eindhoven Univ. Technol. Eindhoven Nld
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Sakai Tomohiro
Department Of Innovative And Engineered Materials Interdisciplinary Graduate School Of Science And E
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NAKASAKI Ryuusuke
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Electronics and In
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OYAMA Susumu
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Electronics and In
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Satoh Yoshihiro
Division of Pathology, Isehara Kyodo Hospital
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YOSHIDA Seikoh
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd
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Basile Alberto
Research Center For Integrated Quantum Electronics (rciqe) Hokkaido University
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Ishikawa Fumitaro
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Sakai T
Dainippon Screen Manufacturing Co. Ltd. Kyoto Jpn
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Nomura Takehiko
Yokohama R&d Laboratories The Furukawa Electric Co. Ltd.
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TOMOZAWA Hidemasa
Eniwa Research and Development Center, Kyoto Semiconductor Corporation
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TAKEUCHI Mariko
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Scienc
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KOKAWA Takuya
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Scienc
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Takeuchi Mariko
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Kokawa Takuya
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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KANEKO Masamitsu
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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MURANAKA Tsutomu
Research Center for Integrated Quantum Electronics, Hokkaido University
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KAKUMU Takaaki
Research Center for Integrated Quantum Electronics and Graduate School of Electronics and Informatio
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Satoh Yoshihiro
Mitsubishi Electric Corporation
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Hasegawa Haruhiro
Superconductivity Research Laboratory International Superconductivity Technology Center
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Tomozawa Hidemasa
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Tomozawa Hidemasa
Eniwa Research And Development Center Kyoto Semiconductor Corporation
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SAKAI Takamasa
Dainippon Screen Manufacturing Co., Ltd.
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JINUSHI Keiichiro
Research Center for Interface Quantum Electronics and Department of Electrical Engineering, Hokkaido
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Tamai Isao
Research Center For Integrated Quantum Electronics And Graduate School Of Information Science And Te
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Yoshida Seikoh
Yokohama R&d Laboratories The Furukawa Electric Co. Ltd.
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JIN Zhi
Research Center for Interface Quantum Electronics (RCIQE), Hokkaido University
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Jin Z
Ecole Polytechnique De Montreal Quebec Can
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FUJINO Toshiyuki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Scienc
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Sakai T
Laboratory Of Plant Cell Biochemistry Department Of Applied Plant Science Division Of Life Science G
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SHIOZAKI Nanako
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Scienc
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TAMAURA Takahiro
Research Center for Integrated Quantum Electronics and Graduate School of Information Science and Te
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OIKAWA Takeshi
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Scienc
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IKEYA Kengo
Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information
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Kubo Toshiharu
Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo 060-8628, Japan
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Nakasaki R
Hokkaido Univ. Sapporo Jpn
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Jin Zhi
Research Center For Integrated Quantum Electronics And Graduate School Of Electronics And Informatio
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Ooyama Kimihito
Research Center For Integrated Quantum Electronics And Graduate School Of Information Science And Te
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Ooyama Kimihito
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Kubo Toshiharu
Research Center For Integrated Quantum Electronics Hokkaido University
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Sugawara Katsuya
Research Center For Integrated Quantum Electronics And Graduate School Of Information Science And Te
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Sakai Toshikatsu
School Of Science And Engineering Waseda University:crest Japan Science And Technology Corporation (
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Ikeya Kengo
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Tamura Takahiro
Research Center For Integrated Quantum Electronics And Graduate School Of Information Science And Te
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Tamaura Takahiro
Research Center For Integrated Quantum Electronics And Graduate School Of Information Science And Te
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Hashim Abdul
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Satoh Y
Division Of Pathology Isehara Kyodo Hospital
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Satoh Yoshihiro
Research Center for Interface Quantum Electronics and Graduate School of
著作論文
- Realization of an extremely low reflectance surface based on InP porous nanostructures for application to photoelectrochemical solar cells
- Interface characterization of Al_2O_3/AlGaN structures prepared by atomic layer deposition
- Characterization of GaN surfaces after high-temperature annealing and carbon diffusion(Session9B: GaN and SiC Device Process Technology)
- Future of Heterostructure Microelectronics and Roles of Materials Research for Its Progress(Plenary,Heterostructure Microelectronics with TWHM2005)
- 2-bit Arithmetic Logic Unit Utilizing Hexagonal BDD Architecture for Implementation of Nanoprocessor on GaAs Nanowire Network(Session4B: Emerging Devices II)
- 2-bit Arithmetic Logic Unit Utilizing Hexagonal BDD Architecture for Implementation of Nanoprocessor on GaAs Nanowire Network(Session4B: Emerging Devices II)
- Nearly Temperature-Independent Saturation Drain Current in a Multi-Mesa-Channel AlGaN/GaN High-Electron-Mobility Transistor
- Characterization of deep electron levels of AlGaN grown by MOVPE(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- Gate Leakage in AlGaN/GaN Heterostructure Field Effect Transistors and Its Suppression by Novel Al_2O_3 Insulated Gate(Heterostructure Microelectronics with TWHM2003)
- Surface Passivation Process for GaN-Based Electronic Devices Utilizing ECR-CVD SiN_χ Film(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- Nitridation of GaP(100)Surfaces by rf Nitrogen Radicals and by Electron Cyclotron Resonance Nitrogen Plasma
- Nitridation of GaP Surfaces by Rf Nitrogen Radicals and by ECR Nitrogen Plasma
- In-Situ Contactless Characterization of Microscopic and Macroscopic Properties of Si-doped MBE-Grown (2×4) GaAs Surfaces
- In-Situ Contactless Characterization of Microscopic and Macroscopic Properties of Si-Doped MBE-Grown (2x4) GaAs Surfaces
- Interface characterization of Al_2O_3/AlGaN structures prepared by atomic layer deposition
- Solid-Phase Diffusion of Carbon into GaN Using SiNx/CNx/GaN Structure
- Large Modulation of Conductance in Interdigital-Gated HEMT Devices Due to Surface Plasma Wave Interactions
- Large Conductance Modulation in Interdigital Gate HEMT Device due to Surface Plasma Wave Interactions and Its Device Application
- Performance of open-gate AlGaN/GaN HFET in various kinds of liquids
- Electrochemical formation of InP porous structures for their application to photoelectric conversion devices(Session 2B : Graphene and III-Vs)
- Electrochemical formation of InP porous structures for their application to photoelectric conversion devices(Session 2B : Graphene and III-Vs)
- Electrochemical Functionalization of InP Porous Nanostructures with a GOD Membrane for Amperometric Glucose Sensors
- Fundamental Study of InP-Based Open-Gate Field-Effect Transistors for Application to Liquid-Phase Chemical Sensors
- Formation and application of InP porous structures on p-n substrates
- Formation and application of InP porous structures on p-n substrates
- Electrochemical formation and functionalization of InP porous nanostructures and their application to chemical sensors(Session8B: High-Frequency, Photonic and Sensing Devices)
- Electrochemical formation and functionalization of InP porous nanostructures and their application to chemical sensors(Session8B: High-Frequency, Photonic and Sensing Devices)
- Amperometric Detection of Hydrogen Peroxide Using InP Porous Nanostructures
- Surface Control Process of AlGaN for Suppression of Gate Leakage Currents in AlGaN/GaN Heterostructure Field Effect Transistors
- Fabrication of AlGaN/GaN Quantum Nanostructures by Methane-Based Dry Etching and Characterization of Their Electrical Properties
- Control of Order Parameter during Growth of In_Ga_P/GaAs Heterostructures by Gas Source Molecular Beam Epitaxy Using Tertiarybutylphosphine
- Sensing Mechanism of InP Hydrogen Sensors Using Pt Schottky Diodes Formed by Electrochemical Process
- Non-Destructive Characterization of Electronic Properties of Pre- and Post-Processing Silicon Surfaces by UHV Contactless Capacitance-Voltage Method
- Realization of GaAs-Based Single Electron Devices Having Single and Multiple Dots by Schottky In-Plane-Gate Control of Two Dimensional Electron Gas
- Novel GaAs-Based Single-Electron Transistors with Schottky In-Plane Gates Operating up to 20 K
- Novel Schottky In-Plane Gate Single-Electron Transistors Using GaAs/AlGaAs System Operating up to 10K
- Observation of Conductance Quantization in A Novel Schottky In-Plane Gate Wire Transistor Fabricated by Low-Damage In Situ Electrochemical Process
- In-Situ XPS Study of Etch Chemistry of Methane-Based RIBE of InP Using N_2
- Fabrication and Characterization of Novel Oxide-Free InP Metal-Insulator-Semiconductor FETs Having an Ultra Narrow Si Surface Quantum Well
- Fabrication and Characterization of Novel Oxide-Free InP MISFETs Having an Ultra-Narrow Si Surface Quantum Well
- X-Ray Photoelectron Spectroscopy and Ultrahigh Vacuum Contactless Capacitance-Voltage Characterization of Novel Oxide-Free InP Passivation Process Using a Silicon Surface Quantum Well
- Characterization of Interface Electronic Properties of Low-Temperature Ultrathin Oxides and Oxynitrides Formed on Si(111) Surfaces by Contactless Capacitance-Voltage and Photoluminescence Methods
- Electronic Interface Properties of Low Temperature Ultrathin Oxides on Si(111) Surfaces Studied by Contactless Capacitance-Voltage and Photoluminescence Methods
- Characterization of GaN surfaces after high-temperature annealing and carbon diffusion(Session9B: GaN and SiC Device Process Technology)
- Basic Control Characteristics of Novel Schottky In-Plane and Wrap Gate Structures Studied by Simulation and Transport Measurements in GaAs and InGaAs Quantum Wires ( Quantum Dot Structures)
- Observation of Coulomb Blockade Type Conductance Oscillations up to 50 K in Gated InGaAs Ridge Quantum Wires Grown by Molecular Beam Epitaxy on InP Substrates
- Variation of Surface Potentials of Si-Doped Al_xGa_N (O
- Optical Properties of Size-Controlled Porous Nanostructures Formed on n-InP (001) Substrates by Electrochemical Process
- Dynamic response of interface state charges in GaN MIS structures
- High-temperature and UV-assisted C-V characterization of GaN MIS structures
- Formation of Thin Native Oxide Layer on n-GaN by Electrochemical Process in Mixed Solution with Glycol and Water
- Embedded Nanowire Network Growth and Node Device Fabrication for GaAs-Based High-Density Hexagonal BDD Quantum Circuits
- Growth of AlGaN/GaN Quantum Wire Structures by RF-Radical Assisted Selective MBE on Pre-Patterned Substrates
- Formation of Quantum Dots by Schottky Wrap Gate Control of 2DEG and Its Application to Single Electron Transistors
- Capacitance-Voltage Behavior of Insulated Gate InGaAs HEMT Capacitors Having Silicon Interface Control Layer
- Novel Insulated Gate InGaAs HEMT Technology Using Silicon Interface Control Layer
- Electron Beam Induced Current Characterization of Novel GaAs Quantum Nanostructures Based on Potential Modulation of Two-Dimensional Electron Gas by Schottky In-Plane Gates
- Successful Passivation of Air-Exposed AlGaAs Surfaces by a Silicon Interface Control Layer-Based Technique
- Photoluminescence and X-Ray Photoelectron Study of AlGaAs/GaAs Near-Surface Quantum Wells Passivated by a Novel Interface Control Technique
- More than 10^3 Times Photoluminescence Intensity Recovery by Silicon Interface-Control-Layer-Based Surface Passivation of Near-Surface Quantum Wells
- Low Reflectance Surface Observed on InP Porous Structures after Photoelectrochemical Etching