Ishikawa Yasuhiko | Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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概要
- 同名の論文著者
- Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Informationの論文著者
関連著者
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Ishikawa Yasuhiko
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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ISHIKAWA Yasuhiko
Research Institute of Electronics, Shizuoka University
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Tabe Michiharu
Research Institue Of Electronics Shizuoka University
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Ishikawa Y
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Ishikawa Y
Dowa Mining Co. Ltd. Tokyo
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Ishikawa Y
Hokkaido Univ. Sapporo Jpn
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TABE Michiharu
Research Institute of Electronics, Shizuoka University
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田部 道晴
静岡大学電子工学研究所
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HASEGAWA Hideki
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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Hasegawa Hideki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan
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石川 靖彦
静岡大学電子工学研究所
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Ishikawa Y
Department Of Electrical And Electronics Engineering Nippon Institute Of Technology
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Ikeda Hiroya
Research Institute Of Electronics Shizuoka University
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Nuryadi Ratno
Research Institute Of Electronics Shizuoka University
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Nuryadi Ratno
Department Of Physics Faculty Of Science Shizuoka University
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Nuryadi Ratno
Research Institue Of Electronics Shizuoka University
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Nuryadi Ratno
Shizuoka Univ. Hamamatsu Jpn
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Fukui T
Research Center For Integrated Quantum Electronics Hokkaido University
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FUKUI Takashi
Research Center for Interface Quantum Electronics, Hokkaido University
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Fukui Takashi
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Nuryadi Ratno
Research Institute of Electronics, Shizuoka University
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石川 靖彦
Research Institute Of Electronics Shizuoka University
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Tsuchiya Toshiaki
Shimane Univ.
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福井 孝志
北海道大学情報科学研究科および量子集積エレクトロニクス研究センター
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MORARU Daniel
Research Institute of Electronics, Shizuoka University
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KATO Hiroshi
Research Institute of Electronics, Shizuoka University
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Tabe M
Shizuoka Univ. Hamamatsu Jpn
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Ishikawa Yasuhiko
1research Institute Of Electronics Shizuoka University
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Horiguchi Seiji
Department Of Electrical And Electronic Engineering Akita University
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics Hokkaido University
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Zhang Jianhua
College Of Economics Osaka Prefecture University
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Ishikawa Yasuhiko
Research Institute Of Electronics Shizuoka University
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Yoshida T
Department Of Electronic Engineering Faculty Of Engineering Takushoku University
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Yoshida Tomio
Information Equipment Research Laboratory Matsushita Electric Industrial Co. Ltd.
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YOSHIDA Toshiyuki
Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information
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TSUCHIYA Toshiaki
Shimane University
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MAKITA Shigenori
Research Institute of Electronics, Shizuoka University
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ZHANG Jianhua
Research Institute of Electronics, Shizuoka University
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TSURUMI Naohiro
Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information
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Yoshida Tomoaki
Department Of Materials Science Faculty Of Engineering Tohoku University
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Tsurumi Naohiro
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Yoshida Toshiyuki
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Yoshida T
Matsushita Electric Co. Tochigi Jpn
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Yoshida T
Fukuoka Univ. Fukuoka Jpn
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Zhang Jianhua
Research Institute Of Electronics Shizuoka University
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Makita Shigenori
Research Institute Of Electronics Shizuoka University
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Nagase Masao
Ntt Basic Research Laboratories
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Ono Yukinori
NTT Basic Research Laboratories
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HORIGUCHI Seiji
Department of Electrical and Electronic Engineering, Akita University
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YAMAUCHI Kazuaki
Research Institute of Electronics, Shizuoka University
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Ono Yukinori
Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corporation
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Ono Yukinori
Ntt Basic Research Laboratories Ntt Cornoration
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Yamauchi Kazuaki
Research Institute Of Electronics Shizuoka University
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YAMAMOTO Chihiro
Research Institute of Electronics, Shizuoka University
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Amemiya Yoshihito
Faculty Of Engineering Hokkaido University
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Yang B
Hokkaido Univ. Sapporo Jpn
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Yang Bing
Research Center For Interface Quantum Electronics Hokkaido University
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Nagase M
Ntt Basic Research Laboratories Ntt Corporation
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Moraru Daniel
Shizuoka Univ. Hamamatsu Jpn
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Tabe Michiharu
Ntt Lsi Laboratories:(present Address)research Institute Of Electronics Shizuoka University
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Tabe Michiharu
Research Institute Of Electronics Shizuoka University
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KUMEZAWA Minoru
Research Institute of Electronics, Shizuoka University
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Nuryadi Ratno
Graduate School of Electronic Science and Techonology, Shizuoka University
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Kumezawa Minoru
Research Institute Of Electronics Shizuoka University
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OZEKI Tsuyoshi
Research Center for Interface Quantum Electronics, and Graduate School of Electronics and Informatio
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Yang Bing
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Ozeki Tsuyoshi
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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田部 道晴
静岡大学 電子工学研究所
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Amemiya Yoshihito
The Department Of Electrical Engineering Hokkaido University
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Kosugi Masaaki
Research Institute Of Electronics Shizuoka University
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TERAO Yoichi
Research Institute of Electronics, Shizuoka University
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ASAHI Noboru
Faculty of Engineering, Hokkaido University
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ISHIHARA Takuma
Research Institute of Electronics, Shizuoka University
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IWASAKI Masanori
Research Institute of Electronics, Shizuoka University
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Terao Yoichi
Research Institute Of Electronics Shizuoka University
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Asahi N
Faculty Of Engineering Hokkaido University
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Asahi Noboru
Faculty Of Engineering Hokkaido University
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Ishihara Takuma
Research Institute Of Electronics Shizuoka University
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Ishikawa Yasuhiko
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japan
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Tabe Michiharu
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japan
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Nuryadi Ratno
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japan
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Kosugi Masaaki
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japan
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Tsuchiya Toshiaki
Shimane University, 1060 Nishikawatsu, Matsue 690-8504, Japan
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Ikeda Hiroya
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japan
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Ikeda Hiroya
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432-8011, Japan
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Tabe Michiharu
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432-8011, Japan
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Moraru Daniel
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432-8011, Japan
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Horiguchi Seiji
Department of Electrical and Electronic Engineering, Akita University, 1-1 Tegata-Gakuen-machi, Akita 010-8502, Japan
著作論文
- Fowler-Nordheim Current Oscillations in Si(111)/SiO_2/Twisted-Si(111) Tunneling Structures
- Formation of Nanometer-Scale Dislocation Network Sandwiched by Silicon-on-Insulator Layers
- Charge polarization effect on single-hole-characteristics in a two-dimensional Si multidot structure
- Artificial Dislocation Network in Silicon-on-Insulator Layer for Single-Electron Devices
- Quantum-Confinement Effect in Ultrathin Si Layer of Silicon-on-Insulator Substrate : Semiconductors
- Scanning Tunneling Microscope Study of (001)InP Surface Prepared by Gas Source Molecular Beam Epitaxy
- In-Situ Contactless Characterization of Microscopic and Macroscopic Properties of Si-doped MBE-Grown (2×4) GaAs Surfaces
- In-Situ Contactless Characterization of Microscopic and Macroscopic Properties of Si-Doped MBE-Grown (2x4) GaAs Surfaces
- Capacitance-Voltage Study of Silicon-on-Insulator Structure with an Ultrathin Buried SiO_2 Layer Fabricated by Wafer Bonding
- Effects of Electron Tunneling into a Single-Crystalline Si Layer through an Ultrathin Buried Oxide
- In-Situ Scanning Tunneling Microscope Study of Formation Process of Ultrathin Si Layer by Molecular Beam Epitaxy on GaAs(001)-(2×4) Surface
- In-Situ UHV-STM Study of Formation Process of Ultrathin MBE Si Layer on GaAs(001)-(2x4) Surface
- Missing-Dimer Structures and Their Kink Defects on Molecular Beam Epitaxially Grown (2×4) Reconstructed (001) InP and GaAs Surfaces Studied by Ultrahigh-Vacuum Scanning Tunneling Microscopy
- Missing-Dimer Structures and Their Kink Defects on MBE-Grown (2x4) Reconstructed (001)Inp Surfaces Studied by UHV Scanning Tunneling Microscope
- Thermal Agglomeration of Ultrathin Si Layer on Buried SiO_2
- Thermally-Induced Structural Changes of Ultrathin Silicon-on-Insulator Structure
- Simulation of Visible Light Induced Effects in a Tunnel Junction Array for Photonic Device Applications
- Resonant Tunneling Effect in Si/SiO_2 Double Barrier Structure
- Photoinduced Effects on Single-Charge Tunneling in a Si Two-Dimensional Multidot Field-Effect Transistor
- Concentration of Electric Field near Si Dot/Thermally-Grown SiO2 Interface
- Fowler–Nordheim Current Oscillations in Si(111)/SiO2/Twisted-Si(111) Tunneling Structures