TABE Michiharu | Research Institute of Electronics, Shizuoka University

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著作論文

Design of dopant-induced quantum dot arrays in silicon nanostructures for single-electron transfer (シリコン材料・デバイス)
Design of dopant-induced quantum dot arrays in silicon nanostructures for single-electron transfer (電子デバイス)
Single-electron transfer in phosphorous-doped Si nanowire FETs
Time-controlled single-electron transfer in single-gated asymmetric multiple tunnel junction arrays
Tunneling current oscillations in Si/SiO_2/Si structures(結晶成長評価及びデバイス(化合物,Si,SiGe,その他の電子材料))
Tunneling current oscillations in Si/SiO_2/Si structures(結晶成長評価及びデバイス(化合物,Si, SiGe,その他の電子材料))
Fowler-Nordheim Current Oscillations in Si(111)/SiO_2/Twisted-Si(111) Tunneling Structures
Formation of Nanometer-Scale Dislocation Network Sandwiched by Silicon-on-Insulator Layers
Charge polarization effect on single-hole-characteristics in a two-dimensional Si multidot structure
Photoinduced Effects on Single-Charge Tunneling in a Si Two-Dimensional Multidot Field-Effect Transistor
Artificial Dislocation Network in Silicon-on-Insulator Layer for Single-Electron Devices
Tunneling current oscillations in Si/SiO_2/Si structures(結晶成長評価及びデバイス(化合物,Si, SiGe,その他の電子材料))
Time-controlled single-electron transfer in single-gated asymmetric multiple tunnel junction arrays
Time-controlled single-electron transfer in single-gated asymmetric multiple tunnel junction arrays
Quantum-Confinement Effect in Ultrathin Si Layer of Silicon-on-Insulator Substrate : Semiconductors
Single-Electron Transfer by Inter-Dopant Coupling Tuning in Doped Nanowire Silicon-on-Insulator Field-Effect Transistors
Dopant ionization in silicon nanodevices investigated by Kelvin Probe Force Microscope (シリコン材料・デバイス)
Dopant ionization in silicon nanodevices investigated by Kelvin Probe Force Microscope (電子デバイス)
Photo-illumination effects on the Si multiple-tunnel-junction single-hole devices
Thermal Nitridation of Si(111) Surfaces with N_2 Molecules Studied by X-Ray Photoelectron Spectroscopy
Fabrication and Electrical Characteristics of Silicon Quantum Dot Devices
Light irradiation effect on single-hole-tunneling current of an SOI-FET(結晶成長評価及びデバイス(化合物,Si, SiGe,その他の電子材料))
Concentration of Electric Field near Si Dot/Thermally-Grown SiO_2 Interface
Capacitance-Voltage Study of Silicon-on-Insulator Structure with an Ultrathin Buried SiO_2 Layer Fabricated by Wafer Bonding
Effects of Electron Tunneling into a Single-Crystalline Si Layer through an Ultrathin Buried Oxide
Si Pillar Formation and Height Countrol by Furnace Oxidation of the Si (111) Surface with Ultra-Small SiN Nuclei
Si Pillar Formation and Height Control by Furnace Oxidation of the Si (111) Surface with Ultra-Small SiN Nuclei
Photon irradiation effects on Si multiple-tunnel-junction field-effect transistors : Sensing the presence of a single-charge in the substrate
Nanometer-Scale Local Oxidation of Si Using SiN Islands Formed in the Early Stages of Nitridation
Multi-Charge Turnstile Operation in Random-Multidot Channel FET
Fabrication of CoSi2-Buried-Metal-Layer Si Substrates for Infrared Reflection Absorption Spectroscopy by Wafer-Bonding
Light irradiation effect on single-hole-tunneling current of an SOI-FET(結晶成長評価及びデバイス(化合物,Si,SiGe,その他の電子材料))
Light irradiation effect on single-hole-tunneling current of an SOI-FET(結晶成長評価及びデバイス(化合物,Si, SiGe,その他の電子材料))
Thermal Agglomeration of Ultrathin Si Layer on Buried SiO_2
Thermally-Induced Structural Changes of Ultrathin Silicon-on-Insulator Structure
Simulation of Visible Light Induced Effects in a Tunnel Junction Array for Photonic Device Applications
Resonant Tunneling Effect in Si/SiO_2 Double Barrier Structure

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