Quantum-Confinement Effect in Ultrathin Si Layer of Silicon-on-Insulator Substrate : Semiconductors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2001-02-15
著者
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TABE Michiharu
Research Institute of Electronics, Shizuoka University
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ISHIKAWA Yasuhiko
Research Institute of Electronics, Shizuoka University
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Tabe Michiharu
Research Institue Of Electronics Shizuoka University
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Ishikawa Yasuhiko
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Ishikawa Yasuhiko
Research Institute Of Electronics Shizuoka University
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KUMEZAWA Minoru
Research Institute of Electronics, Shizuoka University
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Kumezawa Minoru
Research Institute Of Electronics Shizuoka University
関連論文
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- Single-electron transfer in phosphorous-doped Si nanowire FETs
- Time-controlled single-electron transfer in single-gated asymmetric multiple tunnel junction arrays
- Tunneling current oscillations in Si/SiO_2/Si structures(結晶成長評価及びデバイス(化合物,Si,SiGe,その他の電子材料))
- Tunneling current oscillations in Si/SiO_2/Si structures(結晶成長評価及びデバイス(化合物,Si, SiGe,その他の電子材料))
- Fowler-Nordheim Current Oscillations in Si(111)/SiO_2/Twisted-Si(111) Tunneling Structures
- Formation of Nanometer-Scale Dislocation Network Sandwiched by Silicon-on-Insulator Layers
- Charge polarization effect on single-hole-characteristics in a two-dimensional Si multidot structure
- Photoinduced Effects on Single-Charge Tunneling in a Si Two-Dimensional Multidot Field-Effect Transistor
- Artificial Dislocation Network in Silicon-on-Insulator Layer for Single-Electron Devices
- Tunneling current oscillations in Si/SiO_2/Si structures(結晶成長評価及びデバイス(化合物,Si, SiGe,その他の電子材料))
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- Quantum-Confinement Effect in Ultrathin Si Layer of Silicon-on-Insulator Substrate : Semiconductors
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- Multi-Charge Turnstile Operation in Random-Multidot Channel FET
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- Thermally-Induced Structural Changes of Ultrathin Silicon-on-Insulator Structure
- Simulation of Visible Light Induced Effects in a Tunnel Junction Array for Photonic Device Applications
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