Fabrication of CoSi2-Buried-Metal-Layer Si Substrates for Infrared Reflection Absorption Spectroscopy by Wafer-Bonding

スポンサーリンク

概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-06-30

著者

• TABE Michiharu

  Research Institute of Electronics, Shizuoka University

• WATANABE Satoru

  Fujitsu Laboratories Ltd.

• URISU Tsuneo

  The Graduate University for Advanced Studies, Institute for Molecular Science

• YAMAMURA Shusaku

  The Graduate University for Advanced Studies, Institute for Molecular Science

• YAMAUCHI Shouichi

  DENSO Research Laboratories

• KASAI Toshio

  Graduate School of Science and Engineering, Saitama University

• NONOGAKI Youichi

  The Graduate University for Advanced Studies, Institute for Molecular Science

関連論文

• Design of dopant-induced quantum dot arrays in silicon nanostructures for single-electron transfer (シリコン材料・デバイス)
• Design of dopant-induced quantum dot arrays in silicon nanostructures for single-electron transfer (電子デバイス)
• Single-electron transfer in phosphorous-doped Si nanowire FETs
• Time-controlled single-electron transfer in single-gated asymmetric multiple tunnel junction arrays
• Tunneling current oscillations in Si/SiO_2/Si structures(結晶成長評価及びデバイス(化合物,Si,SiGe,その他の電子材料))
• Tunneling current oscillations in Si/SiO_2/Si structures(結晶成長評価及びデバイス(化合物,Si, SiGe,その他の電子材料))
• Fowler-Nordheim Current Oscillations in Si(111)/SiO_2/Twisted-Si(111) Tunneling Structures
• Formation of Nanometer-Scale Dislocation Network Sandwiched by Silicon-on-Insulator Layers
• Charge polarization effect on single-hole-characteristics in a two-dimensional Si multidot structure
• Photoinduced Effects on Single-Charge Tunneling in a Si Two-Dimensional Multidot Field-Effect Transistor
• Artificial Dislocation Network in Silicon-on-Insulator Layer for Single-Electron Devices
• Tunneling current oscillations in Si/SiO_2/Si structures(結晶成長評価及びデバイス(化合物,Si, SiGe,その他の電子材料))
• Time-controlled single-electron transfer in single-gated asymmetric multiple tunnel junction arrays
• Time-controlled single-electron transfer in single-gated asymmetric multiple tunnel junction arrays
• Quantum-Confinement Effect in Ultrathin Si Layer of Silicon-on-Insulator Substrate : Semiconductors
• Single-Electron Transfer by Inter-Dopant Coupling Tuning in Doped Nanowire Silicon-on-Insulator Field-Effect Transistors
• Dopant ionization in silicon nanodevices investigated by Kelvin Probe Force Microscope (シリコン材料・デバイス)
• Dopant ionization in silicon nanodevices investigated by Kelvin Probe Force Microscope (電子デバイス)
• Photo-illumination effects on the Si multiple-tunnel-junction single-hole devices
• Thermal Nitridation of Si(111) Surfaces with N_2 Molecules Studied by X-Ray Photoelectron Spectroscopy
• X-Ray Reflectometry and Infrared Analysis of Native Oxides on Si (100) Formed by Chemical Treatment
• Transient Oxide Layer at a Thermally Grown SiO_2/Si Interface, Interpreted Based on Local Vibration and X-Ray Reflectivity
• X-Ray Reflectometry and Infrared Analysis of Native Oxides on Si(100) Formed in Chemical Treatment
• Characterization of Dipalmitoylphosphatidylcholine/Cholesterol Langmuir-Blodgett Monolayers Investigated by Atomic Force Microscopy and Fourier Transform Infrared Spectroscopy
• Fabrication and Electrical Characteristics of Silicon Quantum Dot Devices
• Light irradiation effect on single-hole-tunneling current of an SOI-FET(結晶成長評価及びデバイス(化合物,Si, SiGe,その他の電子材料))
• Concentration of Electric Field near Si Dot/Thermally-Grown SiO_2 Interface
• Capacitance-Voltage Study of Silicon-on-Insulator Structure with an Ultrathin Buried SiO_2 Layer Fabricated by Wafer Bonding
• Effects of Electron Tunneling into a Single-Crystalline Si Layer through an Ultrathin Buried Oxide
• Wafer Cleaning with Photoexcited Chlorine and Thermal Treatment for High-Quality silicon Epitaxy : Beam Induced Physics and Chemistry
• Si Pillar Formation and Height Countrol by Furnace Oxidation of the Si (111) Surface with Ultra-Small SiN Nuclei
• Si Pillar Formation and Height Control by Furnace Oxidation of the Si (111) Surface with Ultra-Small SiN Nuclei
• Photon irradiation effects on Si multiple-tunnel-junction field-effect transistors : Sensing the presence of a single-charge in the substrate
• Nanometer-Scale Local Oxidation of Si Using SiN Islands Formed in the Early Stages of Nitridation
• Multi-Charge Turnstile Operation in Random-Multidot Channel FET
• Fabrication of CoSi2-Buried-Metal-Layer Si Substrates for Infrared Reflection Absorption Spectroscopy by Wafer-Bonding
• Silicon-Monohydride Termination of Silicon-111 Surface Formed by Boiling Water
• IrO_2/Pb(Zr,Ti)O_3/Pt Capacitor Degradation with D_2 Gas at Elevated Temperature
• Mechanism of Vestibular Adaptation of Fish under Microgravity
• Mechanism of Vestibular Adaptation of Fish under Microgravity (特集:日本の宇宙生物学実験)
• Light irradiation effect on single-hole-tunneling current of an SOI-FET(結晶成長評価及びデバイス(化合物,Si,SiGe,その他の電子材料))
• Light irradiation effect on single-hole-tunneling current of an SOI-FET(結晶成長評価及びデバイス(化合物,Si, SiGe,その他の電子材料))
• Shrinking of Spin-On-Glass Films Induced by Synchrotron Radiation and Its Application to Three-Dimensional Microfabrications
• Atomic Step Structure on Vicnal H/Si(111) Surface Formed by Hot Water Immersion
• Synchrotron Radiation Irradiation Effects for SiH_n on Si(100) Surface in the Synchrotron Radiation Stimulated Si Gas Source Molecular Beam Epitaxy
• Large Desorption Yield of Hydrogen Atoms from Silicon Surface in Homogeneous Electron Injection
• Thermal Agglomeration of Ultrathin Si Layer on Buried SiO_2
• Thermally-Induced Structural Changes of Ultrathin Silicon-on-Insulator Structure
• Simulation of Visible Light Induced Effects in a Tunnel Junction Array for Photonic Device Applications
• Resonant Tunneling Effect in Si/SiO_2 Double Barrier Structure
• Effects of Reaction Product During Hydrogenation of Si Surfaces in HF Solution
• Influence of Microscopic Chemical Reactions on the Preparation of an Oxide-Free Silicon Surface in a Fluorine-Based Solution
• Influence of Microscopic Chemical Reaction on the Preparation of Oxide Free Silicon Surface in Fluorine-Based Solution
• Effects of Reaction Product During Hydrogenation of Si Surfaces in HF Solution
• Noise Properties of Incubation-Type Planar Ion Channel Biosensor
• Fluorine Adsorption and Etching on Si(111):SiH Surface during Immersion in HF Solution
• Fabrication of CoSi2-Buried-Metal-Layer Si Substrates for Infrared Reflection Absorption Spectroscopy by Wafer-Bonding
• Observation of Solution/Si Interface Using IR Spectrochemical Cell During Wet Chemical Oxidation
• Shrinking of Spin-On-Glass Films Induced by Synchrotron Radiation and Its Application to Three-Dimensional Microfabrications
• Characterization of Dipalmitoylphosphatidylcholine/Cholesterol Langmuir-Blodgett Monolayers Investigated by Atomic Force Microscopy and Fourier Transform Infrared Spectroscopy
• Giant Vesicle Fusion on Microelectrodes Fabricated by Femtosecond Laser Ablation Followed by Synchrotron Radiation Etching

もっと見る 閉じる

スポンサーリンク