IrO_2/Pb(Zr,Ti)O_3/Pt Capacitor Degradation with D_2 Gas at Elevated Temperature
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-02-15
著者
-
WATANABE Satoru
Fujitsu Laboratories Ltd.
-
Cross Jeffrey
Fujitsu Laboratories Ltd.
-
Watanabe S
Division Of Materials Science Graduate School Of Engineering Hokkaido University
-
Mizuta Naomi
Fujitsu Laboratories Ltd.
-
Horii Yoshimasa
Fujitsu Limited
-
Horii Yoshimasa
Fujitsu Laboratory Ltd.
-
ESHITA Takeshi
Fujitsu Limited
-
Watanabe Satoru
Fujita Health University
関連論文
- X-Ray Reflectometry and Infrared Analysis of Native Oxides on Si (100) Formed by Chemical Treatment
- Transient Oxide Layer at a Thermally Grown SiO_2/Si Interface, Interpreted Based on Local Vibration and X-Ray Reflectivity
- X-Ray Reflectometry and Infrared Analysis of Native Oxides on Si(100) Formed in Chemical Treatment
- Boundary Structure of Mo/Si Multilayers for Soft X-Ray Mirrors
- Electron-Irradiation-Induced Amorphization in Mo/Si Nano-Multilayer Material
- Proposal of Cryogenic Plasmas in Liquid Helium II
- Possible Existence of a Transient Superfluid Plasma in Liquid Helium II
- Wafer Cleaning with Photoexcited Chlorine and Thermal Treatment for High-Quality silicon Epitaxy : Beam Induced Physics and Chemistry
- Mechanism of the Reduction of Electron Shading Charge Build-up Using Pulsed Plasma
- High-Frequency Measurements of Plasma Parameters in Electron Cyclotron Resonance Plasma Etchers(Nuclear Science, Plasmas, and Electric Discharges)
- Evaluation of Charge Passed through Gate-Oxide Films Using a Charging Damage Measurement Electrode
- Production of highly uniform electron cyclotron resonance plasmas by distribution control of the microwave electric field
- Slant Slot Antenna-Type Electron Cyclotron Resonance Plasma Source
- Concentric Spread Plasma Source
- Fabrication of CoSi2-Buried-Metal-Layer Si Substrates for Infrared Reflection Absorption Spectroscopy by Wafer-Bonding
- Silicon-Monohydride Termination of Silicon-111 Surface Formed by Boiling Water
- Metastable Defect Cluster Formation during Radiation-Induced Amorphization in NiTi
- Atomistic observation and simulation analysis of spatiotemporal fluctuations during radiation-induced amorphization
- Effect of Surface Modification by Ion Implantation on Hydrogenation Property of TiFe Alloy
- Dynamical Study of Spatio-Temporal Structural Fluctuations in the Intermetallic Compound Nickel-Titanium during Radiation-Induced Crystalline-to-Amorphous Transformation
- Improvement of Corrosion Resistance and Structural Change in 304 Stainless Steel by means of Ion-Mixing
- IrO_2/Pb(Zr,Ti)O_3/Pt Capacitor Degradation with D_2 Gas at Elevated Temperature
- Formation and Stability of Metallic Silicides during Ion-Beam-Mixing in the Systems of Mo/Si and Ti/Si
- Mechanism of Vestibular Adaptation of Fish under Microgravity
- Mechanism of Vestibular Adaptation of Fish under Microgravity (特集:日本の宇宙生物学実験)
- Characteristics of Metal/Ferroelectric/Insulator/Semiconductor Using La_2O_3 Thin Film as an Insulator : Electrical Properties of Condensed Matter
- Spatial Distribution and Transport of an Electron Cyclotron Resonance Plasma Generated Using Dominant-Mode Microwave
- Spatial Distribution Measurement of Microwave Electric Field Using Thermal Sensitive Paper in a Microwave Etching System
- Atomic Step Structure on Vicnal H/Si(111) Surface Formed by Hot Water Immersion
- Large Desorption Yield of Hydrogen Atoms from Silicon Surface in Homogeneous Electron Injection
- EXAFS Study of Cation Sites in In-thiospinel Compound FeIn_2S_4
- Evaluation of (Pb, La)(Zr, Ti)O_3 (PLZT) Capacitors of Different Film Thicknesses with Pt/SrRuO_3 Top Electrodes
- Design and Application of Ferroelectric Memory Based Nonvolatile SRAM(New System Paradigms for Integrated Electronics)
- Characterization of D_2 Gas Interaction with (Pb, La)(Zr, Ti)O_3 Film on Pt and Ti at Elevated Temperature
- Fatigue Properties of (100)/(001) and (111) Oriented Pb(Zr, Ti)O_3 Thin Film Capacitors : Electrical Properties of Condensed Matter
- Suppression of the Phase Transition to C54 TiSi_2 due to Epitaxial Growth of C49 TiSi_2 on Si(001) Substrates in Silicidation Process
- Grazing Incidence X-Ray Diffraction Study on Effect of Implanted BF^+_2 and Linewidth on Titanium Silicidation
- (Pb, La)(Zr, Ti)O_3 Film Grain-Boundary Conduction with SrRuO_3 Top Electrodes : Electrical Properties of Condensed Matter
- Effects of Reaction Product During Hydrogenation of Si Surfaces in HF Solution
- Influence of Microscopic Chemical Reactions on the Preparation of an Oxide-Free Silicon Surface in a Fluorine-Based Solution
- Influence of Microscopic Chemical Reaction on the Preparation of Oxide Free Silicon Surface in Fluorine-Based Solution
- Effects of Reaction Product During Hydrogenation of Si Surfaces in HF Solution
- Fluorine Adsorption and Etching on Si(111):SiH Surface during Immersion in HF Solution
- Fabrication of CoSi2-Buried-Metal-Layer Si Substrates for Infrared Reflection Absorption Spectroscopy by Wafer-Bonding
- Observation of Solution/Si Interface Using IR Spectrochemical Cell During Wet Chemical Oxidation
- Generation of a New Interface State Associated with Ultrathin Gate Dielectrics/Silicon under Electric Stress
- Low-Temperature Preparation of (111)-oriented Pb(Zr,Ti)O3 Films Using Lattice-Matched (111)SrRuO3/Pt Bottom Electrode by Metal–Organic Chemical Vapor Deposition
- Mn2O3 Slurry Reuse by Circulation Achieving High Constant Removal Rate
- Mn2O3 Slurry Achieving Reduction of Slurry Waste
- Effect of Oxygen Annealing on Ferroelectricity of BiFeO3 Thin Films Formed by Pulsed Laser Deposition
- Room-Temperature Electrical-Field Induced Oxygen Diffusion of Aluminum/Yttria-Stabilized Zirconia Thin Film Grown on Si Substrate
- Chemical Structure of Nitrogen Atoms in Thin-Film Nitrided Silicon Dioxide Formed on Silicon Substrate after Hydrogenation Reaction in Hydrofluoric Acid
- In Situ Infrared Spectroscopy on the Wet Chemical Oxidation of Hydrogen-Terminated Si Surfaces
- Wafer Cleaning with Photoexcited Chlorine and Thermal Treatment for High-Quality Silicon Epitaxy