Transient Oxide Layer at a Thermally Grown SiO_2/Si Interface, Interpreted Based on Local Vibration and X-Ray Reflectivity
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概要
- 論文の詳細を見る
- 1996-08-26
著者
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Watanabe S
Univ. Tokyo Tokyo Jpn
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SUGITA Yoshihiro
Fujitsu Laboratories Ltd.
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WATANABE Satoru
Fujitsu Laboratories Ltd.
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AWAJI Naoki
Fujitsu Laboratories Ltd.
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Watanabe S
R&d Center Kasado Administrative Division Power & Industrial Systems Hitachi Ltd.
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Watanabe S
Division Of Materials Science Graduate School Of Engineering Hokkaido University
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Sugita Yutaka
Research Institute Of Electrical Communication Tohoku University
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Sugita Yutaka
Hitachi Research Laboratory Hitachi Lid.
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Watanabe Seiichi
R&d Center Kasado Administrative Division Power & Industrial Systems Hitachi Ltd.
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Sugita Y
Department Of Physics Toyama University
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Awaji Naoki
Sortec Corporation:(present Address)fujitsu Laboratories Ltd.
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WATANABE Shigeya
Department of Engineering Physics, Faculty of Engineering, Kyoto University
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Watanabe Satoru
Fujita Health University
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