Si Quantum Dot Formation with Low-Pressure Chemical Vapor Deposition
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概要
- 論文の詳細を見る
We report a simple technique for fabricating a layer of isolated Si quantum dots. The procedure uses conventional low-pressure chemical vapor deposition (LPCVD) for an extremely short deposition time in the early stage of poly-Si film growth. The layer resulting from a deposition time of 60 s has isolated Si nanocrystals 5-20 nm in diameter and 2-10 nm in height. Optical absorption measurement shows that the Si-nanocrystal spectrum changes drastically and the onset of absorption shifts to higher energies compared to that of bulk Si. This shift can be explained by the energy gap widening caused by quantum size effects. Special attention is paid to the Brownian migration of Si nanocrystals for fabricating Si quantum dots.
- 社団法人応用物理学会の論文
- 1996-02-15
著者
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YOKOYAMA Naoki
Fujitsu Laboratories Ltd.
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TOMITA Hirofumi
Fujitsu Laboratories Ltd.
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SUGITA Yoshihiro
Fujitsu Laboratories Ltd.
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NAKAJIMA Anri
Fujitsu Laboratories Ltd.
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KAWAMURA Kazuo
Fujitsu Laboratories Ltd.
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