Wavelength-Dispersive Total Reflection X-Ray Fluorescence with High-Brilliance Undulator Radiation at SPring-8
スポンサーリンク
概要
- 論文の詳細を見る
- 2000-12-01
著者
-
KOMIYA Satoshi
Fujitsu Laboratories Ltd.
-
KONOMI Ichiro
TOYOTA Central Research and Development Laboratories Inc.
-
Liu Kuang-yu
Technical Support Center Sony Corporation
-
Kawado Seiji
Technical Support Center Sony Corporation:(present Address)rigaku Corporation
-
Komiya Satoshi
Fujitsu Laboratories Lid.
-
Komiya Satoshi
Spring-8/jasri
-
AWAJI Naoki
Fujitsu Laboratories Ltd.
-
Konomi Ichiro
Toyota Central R&d Labs. Inc.
-
Yamaguchi Koji
Corporate Research & Development Center Toshiba Corporation
-
Ozaki Shinji
Matsushita Technoresearch Inc.
-
OKAJIMA Toshihiro
Advanced Technology R&D Center, Mitsubishi, Electric Corp.
-
HIRAI Yasuharu
Advanced Research Laboratory, Hitachi Ltd.
-
Hirai Yasuharu
Advanced Research Laboratory Hitachi Ltd.
-
Yamamoto Tohru
Central Research Institute Of Electric Power Industry
-
Takahashi Mamoru
Corporate Research & Development Center Toshiba Corporation
-
NISHINO Junichi
Microelectronics Research Center, SANYO Electric Co., Ltd.
-
NOGUCHI Sinichi
Central Research Institute of Electric Power Industry
-
SYOJI Takashi
X-ray Laboratories, Rigaku Corporaton
-
YAMAGAMI Motoyuki
X-ray Laboratories, Rigaku Corporaton
-
KOBAYASHI Akira
Kobe Steel, Ltd.
-
HIRAI You
Kobelco Research Institute, Inc.
-
SHIBATA Masahiro
Sumitomo Electric Industries, Ltd.
-
YAMAGUCHI Koji
Sumitomo Electric Industries, Ltd.
-
YASUAMI Shigeru
Toshiba Corporation
-
KIMURA Shigeru
System Devices and Fundamental Research, NEC Corporation
-
HASEGAWA Masaki
Advanced Research Laboratory, Hitachi Ltd.
-
HIROSE Takayuki
Fujielectric Corp. R&D Ltd.
-
Nishino Junichi
Microelectronics Research Center Sanyo Electric Co. Ltd.
-
Hirose Takayuki
Fujielectric Corp. R&d Ltd.
-
Hirai You
Kobelco Research Institute Inc.
-
Syoji Takashi
X-ray Laboratories Rigaku Corporaton
-
Okajima Toshihiro
Advanced Technology R&d Center Mitsubishi Electric Corporation:(present Address)jasri
-
Yamaguchi Koji
Sumitomo Electric Industries Ltd.
-
Yamagami Motoyuki
X-ray Laboratories Rigaku Corporaton
-
Hasegawa Masaki
Advanced Research Laboratory Hitachi Ltd.
-
Shibata Masahiro
Sumitomo Electric Industries Ltd.
-
Kimura Shigeru
System Devices And Fundamental Research Nec Corporation
-
Kobayashi Akira
Kobe Steel Ltd.
関連論文
- Characterization of ZnSe/GaAs(001) Heteroepitaxial Interfaces by X-Ray Reflectivity Measurement
- Thermally Induced Structural Modification of Nanometer-Order Mo/Si Multilayers by the Spectral Reflectance of Laser-Plasma Soft X-Rays
- Photoluminescence Intensity in InGaAsP/InP Double-Heterostructures
- X-Ray Reflectometry and Infrared Analysis of Native Oxides on Si (100) Formed by Chemical Treatment
- Transient Oxide Layer at a Thermally Grown SiO_2/Si Interface, Interpreted Based on Local Vibration and X-Ray Reflectivity
- X-Ray Reflectometry and Infrared Analysis of Native Oxides on Si(100) Formed in Chemical Treatment
- Studies of Photoluminescence Intensity in the InP/InGaAsP/InP Double Heterostructure
- Analysis of Contamination Layer of InP During LPE Process by Synchrotron Radiation-Excited X-Ray Fluorescence : Surfaces, Interfaces and Films
- Study of α-Sexithienyl Thin Film by Polarized Near Edge X-ray Absorption Fine Structure
- Wavelength-Dispersive Total Reflection X-Ray Fluorescence with High-Brilliance Undulator Radiation at SPring-8
- X-Ray Absorption Studies of High-T_c YBa_2Cu_3O_x : Condensed Matter
- Precise EXAFS Analysis for High-T_c YBa_2Cu_3O_x : Condensed Matter
- Detection Limits of Trace Elements for Wavelength Dispersive Total X-Ray Fluorescence under High Flux Synchrotron Radiation
- X-Ray Photoelectron Spectroscopy of Micrometer-Size Surface Area Using Synchrotron Radiation
- X-Ray Microprobe with a Pair of Elliptical Mirrors
- Determination of the GaAs/AlAs Superlattice Period from the First-Order Superlattice Bragg Reflection
- Novel Interface Structures between Ultrathin Oxynitride and Si(001) Studied by X-Ray Diffraction
- Densified SiOF Film Formation for Preventing Water Absorption
- High-Density Layer at the SiO_2/Si Interface Observed by Difference X-Ray Reflectivity
- Densified SiOF Film Formation for Preventing Water Absorption
- High-Accuracy X-ray Reflectivity Study of Native Oxide Formed in Chemical Treatment
- Improvement of Dose Uniformity in Large Exposure Field for Synchrotron Radiation Lithography
- Development of Highly Stable Synchrotron Radiation Source at SORTEC : X-Ray Lithography
- Development of Highly Stable Synchrotron Radiation Source at SORTEC
- EBIC Observation on the InP/InGaAs/InP Heterostructure Photodiode
- Admittance Study of a Single Electron Trap in the LPE InP/InGaAsP Heterostructure Diode
- Transmission Electron Microscopic Observation of Misfit Dislocation in InP/InGaAsP Double -Heterostructures
- Inhomogeneous Distribution of Avalanche Multiplication in InP APDs
- Calculation of Impurity Concentrations in LPE InP Layers
- Visualization of Defects in GaAs by Oxidation in Water
- Preferential In-Water Oxidation around Defects in Undoped LEC Semi-Insulating GaAs Wafers
- Au-Ge Ohmic Contact to n-GaAs by IR Lamp Alloying
- Lattice Bending in LEC-Grown Semi-Insulating GaAs Wafers
- TEM Observation of Dark Defects Appearing in InGaAsP/InP Double-Heterostructure Light Emitting Diodes Aged at High Temperature
- Formation of Fluorocarbon Monolayers on Anodized Aluminium Plates by Vapor Phase Chemical Adsorption Technique
- Discriminating Molecular Length of Chemically Adsorbed Molecules Using an Atomic Force Microscope Having a Tip Covered with Sensor Molecules (An Atomic Force Microscope Having Chemical Sensing Function)
- TEM Investigation of Dislocation Loops in Undoped InGaAsP and InGaP Layers Grown by Liquid Phase Epitaxy
- Composition-Modulated Structures in InGaAsP and InGaP Liquid Phase Epitaxial Layers Grown on (001) GaAs Substrates
- Comparison of Defect Formation in InGaAsP/InP and GaAlAs/GaAs : B-2: LD AND LED-1
- A Molecular and Jon-Beam Epitaxy System for the Growth of III-V Compound Semiconductors Using a Mass-Separated, Low-Energy Group-V Jon Beam
- Molecular Beam Epitaxy of InP Using Low Energy P^+ Ion Beam
- EXAFS Study of Cation Sites in In-thiospinel Compound FeIn_2S_4
- Degradation of Silicon Carbide in Combustion Gas Flow at High Temperature and High Speed
- Dependence of Rocking Curve for Thin In_Ga_xAs_P_y Layer on Thickness in a Symmetric Bragg Case
- Effect of an InP Buffer Layer on Photoluminescence Efficiency of an InGaAsP Layer
- Thermal Degradation of InP/InGaAsP/InP DH Structure
- Life Test of GaAs DH Lasers at Room Temperature
- Growth Rate and Crystallinity of Nanocrystalline Silicon Film Grown by Electron Beam Excited Plasma Chemical Vapor Deposition
- Lattice Location of ^N Atoms in SiC Analyzed by Nuclear Resonant Reaction
- Study of α-Sexithienyl Thin Film by Polarized Near Edge X-ray Absorption Fine Structure
- XAFS Study on the Pyrochlore-Type Bi_Nd_xRu_2O_7 Solid-Solutions
- Suppression of the Phase Transition to C54 TiSi_2 due to Epitaxial Growth of C49 TiSi_2 on Si(001) Substrates in Silicidation Process
- Grazing Incidence X-Ray Diffraction Study on Effect of Implanted BF^+_2 and Linewidth on Titanium Silicidation
- Transmission Electron Microscopy Observation of CoSi_x Spikes in Si Substrates during Co-silicidation Process
- Fine Adjustment Based on Model for X-Ray Absorption Fine Structure of Ni-Fe Alloy
- Medium-Energy Ion Scattering Analysis with 50 keV He^+ by the Time-of-Flight Technique
- A Simultaneous RHEED/AES Combined System
- Down to 0.1 μm Pattern Replication in Synchrotron Radiation Lithography
- Non-invasive and Time-Resolved Observation of Tumors Implanted in Living Mice by Using Phase-Contrast X-ray Computed Tomography
- Detection Limits of Trace Elements for Wavelength Dispersive Total X-Ray Fluorescence under High Flux Synchrotron Radiation
- Novel Interface Structures between Ultrathin Oxynitride and Si(001) Studied by X-Ray Diffraction
- Characterization of ZnSe/GaAs(001) Heteroepitaxial Interfaces by X-Ray Reflectivity Measurement
- Nondestructive Measurement of Hexavalent Chromium in Chromate Conversion Coatings Using X-ray Absorption Near Edge Structure