Visualization of Defects in GaAs by Oxidation in Water

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1984-06-20

著者

• FUKUTA Katsuyoshi

  Toshiba Research and Development Center, Toshiba Corporation

• YASUAMI Shigeru

  Toshiba Corporation

• Fukuta Katsuyoshi

  Toshiba R & D Center Toshiba Corporation

関連論文

• Growth and Properties of Li_2B_4O_7 Single Crystal for SAW Device Applications : V: PIZOELECTRIC VIBRATOR
• SAW Propagation Characteristics on Li_2B_4O_7 : Surface Acoustic Waves and Devices
• LiTaO_3 Substrate Fabrication and Characterization for Pyroelectric Sensors : FERROELECTRIC MATERIALS
• Wavelength-Dispersive Total Reflection X-Ray Fluorescence with High-Brilliance Undulator Radiation at SPring-8
• Visualization of Defects in GaAs by Oxidation in Water
• Preferential In-Water Oxidation around Defects in Undoped LEC Semi-Insulating GaAs Wafers
• Au-Ge Ohmic Contact to n-GaAs by IR Lamp Alloying
• Lattice Bending in LEC-Grown Semi-Insulating GaAs Wafers

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