Au-Ge Ohmic Contact to n-GaAs by IR Lamp Alloying

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1984-03-20

著者

• YASUAMI Shigeru

  Toshiba Corporation

• Yasuami S

  Toshiba Corp. Kawasaki

• Saito Yasuyuki

  Toshiba R & D Center, Toshiba Corporation

• Hojo Akimichi

  Toshiba R & D Center, Toshiba Corporation

• Saito Yasuyuki

  Toshiba R & D Center Toshiba Corporation

• Hojo A

  Toshiba Ceramics Co. Ltd. Tokyo

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• Preferential In-Water Oxidation around Defects in Undoped LEC Semi-Insulating GaAs Wafers
• Au-Ge Ohmic Contact to n-GaAs by IR Lamp Alloying
• Lattice Bending in LEC-Grown Semi-Insulating GaAs Wafers
• 500 Gates GaAs Gate Array : B-5: GaAs IC
• Epitaxial GaAs Hall Generators for High Temperature Applications : B-5: SENSING DEVICES

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