Epitaxial GaAs Hall Generators for High Temperature Applications : B-5: SENSING DEVICES
スポンサーリンク
概要
著者
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Hojo Akimichi
Toshiba R & D Center, Toshiba Corporation
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Hojo Akimichi
Toshiba R And D Center Tokyo Shibaura Electric Co. Ltd.
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TANAKA Shikei
Toshiba R and D Center, Tokyo Shibaura Electric Co., Ltd.
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KURU Isamu
Toshiba R and D Center, Tokyo Shibaura Electric Co., Ltd.
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Kuru Isamu
Toshiba R And D Center Tokyo Shibaura Electric Co. Ltd.
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Kuru Isamu
Toshiba Central Research Laboratory
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Tanaka Shikei
Toshiba R And D Center Tokyo Shibaura Electric Co. Ltd.
関連論文
- Au-Ge Ohmic Contact to n-GaAs by IR Lamp Alloying
- Lattice Bending in LEC-Grown Semi-Insulating GaAs Wafers
- 500 Gates GaAs Gate Array : B-5: GaAs IC
- Epitaxial GaAs Hall Generators for High Temperature Applications : B-5: SENSING DEVICES
- Current Instabilities in n-GaAs