500 Gates GaAs Gate Array : B-5: GaAs IC
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1983-02-28
著者
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Toyoda Nobuyuki
Toshiba Research & Development Center
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Hojo Akimichi
Toshiba R & D Center, Toshiba Corporation
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TERADA Toshiyuki
Toshiba Research & Development Center
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MOCHIZUKI Masao
Toshiba Research & Development Center
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KANAZAWA Katsue
Toshiba Research & Development Center
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Mochizuki Masao
Toshiba Research & Development Center
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Hojo Akimichi
Toshiba Research & Development Center
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Kanazawa Katsue
Toshiba Research & Development Center
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Terada Toshiyuki
Toshiba Research & Development Center
関連論文
- Au-Ge Ohmic Contact to n-GaAs by IR Lamp Alloying
- Lattice Bending in LEC-Grown Semi-Insulating GaAs Wafers
- 500 Gates GaAs Gate Array : B-5: GaAs IC
- Epitaxial GaAs Hall Generators for High Temperature Applications : B-5: SENSING DEVICES