Current Instabilities in n-GaAs

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概要

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• Three types of current instabilities were observed in n-GaAs. One was the Gunn effect. The other two were thought to be neither the Gunn effect nor that reported by Smith. The most remarkable result was that the critical drift velocity of these instabilities was one order magnitude or more lower than that of the Gunn effect and was sometimes as low as the sound velocity in n-GaAs. The two instabilities were closely correlated to each other. The lattice temperature determined which type of instability would occur. Between 65°K and 85°K the current-voltage curve showed voltage-controlled-negative resistance. The oscillation frequency was 20 Mc/sec-60 Mc/sec, independent of the specimen lengths. Higher than 85°K the current merely saturated and incoherent microwave emission was observed. Differences between the Gunn effect and the present instabilities are reported.

• 社団法人応用物理学会の論文
• 1966-06-15

著者

• Kuru Isamu

  Toshiba Central Research Laboratory

関連論文

• Epitaxial GaAs Hall Generators for High Temperature Applications : B-5: SENSING DEVICES
• Current Instabilities in n-GaAs

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