Composition Effect on CV Profile and Threshold Voltage for MESFETs Fabricated in Undoped LEC SI GaAs
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1986-12-20
著者
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YASUAMI Sigeru
ULSI Research Center, Toshiba Corporation
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Yasuami S
Toshiba Corp. Kawasaki
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Yasuami Shigeru
Research And Development Center Toshiba Corporation
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FUKUTA Katsuyoshi
Research and Development Center, Toshiba Corporation
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WATANABE Masayuki
Research and Development Center, Toshiba Corporation
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NAKANISI Takatosi
Research and Development Center, Toshiba Corporation
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Watanabe Masayuki
Research And Development Center Toshiba Corporation
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Yasuami Sigeru
Ulsi Research Center Toshiba Corporation
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Nakanisi T
Research And Development Center Toshiba Corporation
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Nakanisi Takatosi
Research And Development Center Toshiba Corporation
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Fukuta K
Research And Development Center Toshiba Corporation
関連論文
- Scatterings of Shallow Threshold Voltage on Si-Implanted WN Self-Alignment Gate GaAs Metal-Semiconductor Field-Effect Transistors on Different Composition 2-Inch Substrates by Growing in Three Kinds of Furnaces
- Interface Study on GaAs-on-Si by Transmission Electron Microscopy : Surfaces, Interfaces and Films
- Composition Effect on CV Profile and Threshold Voltage for MESFETs Fabricated in Undoped LEC SI GaAs
- Preferential In-Water Oxidation around Defects in Undoped LEC Semi-Insulating GaAs Wafers
- Au-Ge Ohmic Contact to n-GaAs by IR Lamp Alloying
- Lattice Parameter Measurement of GaAs Crystals Using Monochromatic Synchrotron Radiation
- Modulation-Doped In_Al_P/GaAs Field-Effect Transistors : Semiconductors and Semiconductor Devices