Scatterings of Shallow Threshold Voltage on Si-Implanted WN Self-Alignment Gate GaAs Metal-Semiconductor Field-Effect Transistors on Different Composition 2-Inch Substrates by Growing in Three Kinds of Furnaces
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1991-10-15
著者
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Uchitomi N
Research And Development Center Toshiba Corp.
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Uchitomi Naotaka
Ulsi Laboratories Toshiba Research And Development Center
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KITAURA Yoshiaki
ULSI Laboratories, Toshiba Research and Development Center
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Nishio Johji
Research And Development Center Toshiba Corporation
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Nozaki Chiharu
Research And Development Center Toshiba Corporation
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Kitaura Y
Research And Development Center Toshiba Corp.
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Kitaura Yoshiaki
Ulsi Laboratories Toshiba Research And Development Center
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HIROSE Mayumi
Research and Development Center, Toshiba Corporation
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HIROSE Mayumi
ULSI Research Laboratories, TOSHIBA CORPORATION
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SAITO Yasuyuki
Microelectronics Center in Tamagawa Works, Toshiba Corporation
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FUKUDA Katsuyoshi
Research and Development Center, Toshiba Corporation
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YASUAMI Sigeru
ULSI Research Center, Toshiba Corporation
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YASHIRO Satao
Semiconductor Division of Horikawa Works, Toshiba Corporation
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WASHIZUKA Shoichi
Semiconductor Division of Horikawa Works, Toshiba Corporation
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WATANABE Masayuki
Semiconductor Division of Horikawa Works, Toshiba Corporation
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Saito Yasuyuki
Micro-electronics Center In Tamagawa Works Toshiba Corporation
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Saito Yasuyuki
Microelectronics Center In Tamagawa Works Toshiba Corporation
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Hirose M
Ntt Electronics Ebina‐shi Jpn
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Yasuami Sigeru
Ulsi Research Center Toshiba Corporation
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Fukuda Katsuyoshi
Research And Development Center Toshiba Corporation
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Washizuka Shoichi
Semiconductor Division Of Horikawa Works Toshiba Corporation
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Watanabe Masayuki
Semiconductor Division Of Horikawa Works Toshiba Corporation
関連論文
- Damage Formed by Si^+ Implantation in GaAs
- A Resonant-Type GaAs Switch IC with Low Distortion Characteristics for 1.9GHz PHS (Special Issue on Microwave and Millimeterwave High-power Devices)
- A Monolithic GaAs Linear Power Amplifier Operating with a Single Low 2.7-V Supply for 1.9-GHz Digital Mobile Communication Applications
- Refractory WN_x/W Self-Aligned Gate GaAs Power Metal-Semiconductor Field-Effect Transistor for 1.9-GHz Digital Mobile Communication System Operating with a Single Low-Voltage Supply
- Single 3-V Supply Operation GaAs Linear Power MESFET Amplifier for 5.8-GHz ISM Band Applications (Special Issue on Microwave and Millimeter Wave Technology)
- 0.012-cc Miniaturized GaAs P-Pocket Power MESFET Amplifier Operating with a Single Voltage Supply for PHS Applications
- Single Low 2.4-V Supply Operation GaAs Power MESFET Amplifier with Low-Distortion Gain-Variable Attenuator for 1.9-GHz PHS Applications(Special Issue on Microwave and Millimeter-Wave Module Technology)
- A 2-V Operation Resonant-Type T/R-Switch with Low Distortion Characteristics for 1.9-GHz PHS(Special Issue on Microwave and Millimeter-Wave Module Technology)
- A Self-Aligned Gate AlGaAs/GaAs Heterostructure Field-Effect Transistor with an Ion-Implanted Buried-Channel for use in High Efficiency Power Amplifiers
- A Buried-Channel Self-Aligned GaAs MESFET with High Power-Efficiency and Low Noise-Figure for 1.9-GHz Single-Chip Front-End MMICs (Special Issue on Low-Power and High-Speed LSI Technologies)
- Gate Current Control Method by Pull-Down FET's for 0-28dB GaAs Variable Attenuator in Direct-Conversion Modulator IC for 1.9GHz PHS (Special Issue on Microwave and Millimeterwave High-power Devices)
- A Buried-Channel WN_x/W Self-Aligned GaAs MESFET with High Power-Efficiency and Low Noise-Figure for Single-Chip Front-End MMIC in Personal Handy Phone System
- Buried-Channel WN_x/W Self-Aligned GaAs MESFET Process with Selectively Implanted Channel and Undoped Epitaxial Surface Layers for MMIC Applications
- Scatterings of Shallow Threshold Voltage on Si-Implanted WN Self-Alignment Gate GaAs Metal-Semiconductor Field-Effect Transistors on Different Composition 2-Inch Substrates by Growing in Three Kinds of Furnaces
- Microstructural Observation of Si_Ge_x Thin Films Prepared by Pulsed Ion-Beam Evaporation
- Preparation of Polycrystalline Silicon Thin Films by Pulsed Ion-Beam Evaporation
- Preparation of Polycrystalline Silicon Thin Films by Pulsed Ion-Beam Evaporation
- Mobility Profiles in Self-Aligned WN_X Undoped AlGaAs/n-GaAs/Undoped AlGaAs Doped-Channel Hetero-MISFETs
- Mobility Profiles in Submicron WN_x-BPLDD-GaAs MESFETs
- Interface Study on GaAs-on-Si by Transmission Electron Microscopy : Surfaces, Interfaces and Films
- Composition Effect on CV Profile and Threshold Voltage for MESFETs Fabricated in Undoped LEC SI GaAs
- Preferential In-Water Oxidation around Defects in Undoped LEC Semi-Insulating GaAs Wafers
- Deep-Level Transient Spectroscopy Spectra of Drain Current of Si-Implanted GaAs Metal-Semiconductor Field-Effect Transistors Having Large and Small Low-Frequency Oscillations