Single 3-V Supply Operation GaAs Linear Power MESFET Amplifier for 5.8-GHz ISM Band Applications (Special Issue on Microwave and Millimeter Wave Technology)
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概要
- 論文の詳細を見る
A GaAs linear power amplifier operating with a single 3-V supply has been developed for 5.8-GHz ISM band applications. Two kinds of refractory WN_x/W self-aligned gate MESFETs, a P-pocket MESFET and an asymmetric MESFET with a buried p-layer (BP-MESFET) have been compared in terms of DC characteristics, small signal characteristics and power performances at 5.8 GHz. To obtain both high gain and high efficiency in the case of single 3-V supply operation at 5.8 GHz, we used a highly efficient and linear P-pocket MESFET for the output-stage power FET and a high-gain asymmetric MESFET with a buried p-layer (BP-MESFET) for the driver stage FET. The bias condition for 1-mm output-stage P-pocket MESFET was set near class-AB, so as to obtain sufficient output power with high PAE. The two-stage power amplifier MMIC module which can include all matching and biasing circuits, has been designed and fabricated. The amplifier exhibits a high power gain of 17.9 dB and a high power-added efficiency of 25.7% with a sufficient output power of 18.7 dBm at the 1-dB compression point. This self-aligned gate GaAs MESFET technology is promising for near-future 5.8-GHz applications, because of such good power performance and good mass-producibility.
- 社団法人電子情報通信学会の論文
- 1999-07-25
著者
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Sasaki Tatsuya
Opto And Wireless Deivce Res. Labs. Nec Corporation
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吉村 昌弘
東工大・工材研
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Ikeda Y
Mitsubishi Electric Corporation Information Technology R&d Center
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Ikeda Y
Mitsubishi Electric Corp. Kamakura‐shi Jpn
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Uchitomi N
Research And Development Center Toshiba Corp.
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Uchitomi Naotaka
Research And Development Center Toshiba Corporation
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IKEDA Yoshiko
Research and Development Center, TOSHIBA CORPORATION
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NAGAOKA Masami
Research and Development Center, TOSHIBA CORPORATION
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YOSHIMURA Misao
Research and Development Center, TOSHIBA CORPORATION
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KITAURA Yoshiaki
Research and Development Center, TOSHIBA CORPORATION
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Tanabe Yoshikazu
Research Institutefor Polymers And Textiles
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Nagaoka M
Research And Development Center Toshiba Corp.
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Kitaura Y
Research And Development Center Toshiba Corp.
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Yoshimura Misao
Research And Development Center Toshiba Corp.
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WAKIMOTO Hirotsugu
Research and Development Center, Toshiba Corp.
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SESHITA Toshiki
Research and Development Center, Toshiba Corp.
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MIHARA Masakatsu
Research and Development Center, Toshiba Corp.
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OYA Keiji
Semiconductor System Engineering Center, Toshiba Corp.
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Tanabe Y
Tokyo Inst. Of Technol. Yokohama‐shi
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Oya Keiji
Semiconductor System Engineering Center Toshiba Corp.
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吉村 昌弘
Division Of Electric Electronic And Information Engineering Graduate School Of Engineering Osaka Uni
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Mihara Masakatsu
Research And Development Center Toshiba Corp.
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Tanabe Y
Hiroshima Univ. Higashihiroshima Jpn
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Tanabe Yoshikazu
Research And Development Center Toshiba Corp.
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Sasaki T
Opto And Wireless Deivce Res. Labs. Nec Corporation
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Kitaura Yoshiaki
Research And Development Center Toshiba Corp.
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Wakimoto Hirotsugu
Research And Development Center Toshiba Corp.
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Seshita Toshiki
Research And Development Center Toshiba Corp.
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Nagaoka Masami
Research and Development Center, Toshiba Corp.
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