A Buried-Channel Self-Aligned GaAs MESFET with High Power-Efficiency and Low Noise-Figure for 1.9-GHz Single-Chip Front-End MMICs (Special Issue on Low-Power and High-Speed LSI Technologies)
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概要
- 論文の詳細を見る
We report on 1.9-GHz performance of the Buried-Channel self-aligned WN/W-gate GaAs MESFET (BC-MESFET) for use in digital mobile telephone handsets with low power consumption. The BC-MESFET incorporates undoped i-GaAs epitaxial-grown surface layer on the ion-implanted channel. Both the power and noise performance of the BC-MESFET are superior to the conventional MESFET. The 0.6-μm gate power BC-MESFET exhibits a high power-added efficiency of 57% at 1-dB gain compression, which leads to low power dissipation of the handset. This power performance is attributed to high breakdown voltage which the undoped i-GaAs surface layer has brought about. The BC-MESFET has also shown a minimum noise figure of below 0.4 dB. Taking the IC-oriented fabrication process of the BC-MESFET into consideration, these FET performances demonstrate that the BC-MESFET is suitable for the single-chip MMIC that integrates RF front-end blocks for the 1.9-GHz small-size mobile telephone handset with long battery lifetime.
- 社団法人電子情報通信学会の論文
- 1997-12-25
著者
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吉村 昌弘
東工大・工材研
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Uchitomi N
Research And Development Center Toshiba Corp.
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Uchitomi Naotaka
Research And Development Center Toshiba Corporation
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亀山 敦
神奈川大学工学部化学教室
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KAMEYAMA Atsushi
Research and Development Center, TOSHIBA CORPORATION
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YOSHIMURA Misao
Research and Development Center, TOSHIBA CORPORATION
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KITAURA Yoshiaki
Research and Development Center, TOSHIBA CORPORATION
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Tanabe Yoshikazu
Research Institutefor Polymers And Textiles
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Nishihori K
Toshiba Corp. Kawasaki‐shi Jpn
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Kitaura Y
Research And Development Center Toshiba Corp.
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Yoshimura Misao
Research And Development Center Toshiba Corp.
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MIHARA Masakatsu
Research and Development Center, Toshiba Corp.
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NISHIHORI Kazuya
Research and Development Center, Toshiba Corporation
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HIROSE Mayumi
Research and Development Center, Toshiba Corporation
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Tanabe Y
Tokyo Inst. Of Technol. Yokohama‐shi
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吉村 昌弘
Division Of Electric Electronic And Information Engineering Graduate School Of Engineering Osaka Uni
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Mihara Masakatsu
Research And Development Center Toshiba Corp.
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Tanabe Y
Hiroshima Univ. Higashihiroshima Jpn
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Tanabe Yoshikazu
Research And Development Center Toshiba Corp.
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Hirose M
Ntt Electronics Ebina‐shi Jpn
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Kitaura Yoshiaki
Research And Development Center Toshiba Corp.
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Nishihori Kazuya
Research And Development Center Toshiba Corporation
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