0.012-cc Miniaturized GaAs P-Pocket Power MESFET Amplifier Operating with a Single Voltage Supply for PHS Applications

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概要

• 論文の詳細を見る

• A GaAs power amplifier IC has been developed for 1.9-GHz digital mobile communication applications, such as the handsets of the Japanese personal handy phone system(PHS), which was assembled into a very small 0.012-cc surface mount plastic package. This power amplifier using refractory WN_x/W self-aligned gate MESFETs with p-pocket layers can operate with high efficiency and low distortion with a single 3-V supply. A very low dissipated current of 119mA was obtained with an output power of 21.1dBm and a low 600-kHz adjacent channel leakage power(ACP)of- 63 dBc for π/4-shifted quadrature phase shift keying(QPSK) modulated input.

• 社団法人電子情報通信学会の論文
• 1998-06-25

著者

• Ishida Shinji

  Ulsi Devices Development Laboratories Nec Corporation

• Ishida S

  Toshiba Microelectronics Corp.

• Uchitomi N

  Research And Development Center Toshiba Corp.

• Uchitomi Naotaka

  Research And Development Center Toshiba Corporation

• KAWAKYU Katsue

  Research and Development Center, TOSHIBA CORPORATION

• NAGAOKA Masami

  Research and Development Center, TOSHIBA CORPORATION

• KITAURA Yoshiaki

  Research and Development Center, TOSHIBA CORPORATION

• Nagaoka M

  Research And Development Center Toshiba Corp.

• Kitaura Y

  Research And Development Center Toshiba Corp.

• NAGASAWA Hironori

  Toshiba Microelectronics Corp.

• HONMYO Kenji

  Discrete Semiconductor Div., Toshiba Corp.

• ISHIDA Shinji

  Toshiba Microelectronics Corp.

• Honmyo Kenji

  Discrete Semiconductor Div. Toshiba Corp.

• Kawakyu Katsue

  Toshiba Corp. Research And Development Center

• Kitaura Yoshiaki

  Research And Development Center Toshiba Corp.

• Nagaoka Masami

  Research and Development Center, Toshiba Corp.

関連論文

• A Resonant-Type GaAs Switch IC with Low Distortion Characteristics for 1.9GHz PHS (Special Issue on Microwave and Millimeterwave High-power Devices)
• A Monolithic GaAs Linear Power Amplifier Operating with a Single Low 2.7-V Supply for 1.9-GHz Digital Mobile Communication Applications
• Refractory WN_x/W Self-Aligned Gate GaAs Power Metal-Semiconductor Field-Effect Transistor for 1.9-GHz Digital Mobile Communication System Operating with a Single Low-Voltage Supply
• Design Study on RF Stage for Miniature PHS Terminal (Special Issue on Microwave Devices for Mobile Communications)
• Single 3-V Supply Operation GaAs Linear Power MESFET Amplifier for 5.8-GHz ISM Band Applications (Special Issue on Microwave and Millimeter Wave Technology)
• 0.012-cc Miniaturized GaAs P-Pocket Power MESFET Amplifier Operating with a Single Voltage Supply for PHS Applications
• Single Low 2.4-V Supply Operation GaAs Power MESFET Amplifier with Low-Distortion Gain-Variable Attenuator for 1.9-GHz PHS Applications(Special Issue on Microwave and Millimeter-Wave Module Technology)
• A 2-V Operation Resonant-Type T/R-Switch with Low Distortion Characteristics for 1.9-GHz PHS(Special Issue on Microwave and Millimeter-Wave Module Technology)
• A Self-Aligned Gate AlGaAs/GaAs Heterostructure Field-Effect Transistor with an Ion-Implanted Buried-Channel for use in High Efficiency Power Amplifiers
• A Buried-Channel Self-Aligned GaAs MESFET with High Power-Efficiency and Low Noise-Figure for 1.9-GHz Single-Chip Front-End MMICs (Special Issue on Low-Power and High-Speed LSI Technologies)
• Gate Current Control Method by Pull-Down FET's for 0-28dB GaAs Variable Attenuator in Direct-Conversion Modulator IC for 1.9GHz PHS (Special Issue on Microwave and Millimeterwave High-power Devices)
• A Buried-Channel WN_x/W Self-Aligned GaAs MESFET with High Power-Efficiency and Low Noise-Figure for Single-Chip Front-End MMIC in Personal Handy Phone System
• Buried-Channel WN_x/W Self-Aligned GaAs MESFET Process with Selectively Implanted Channel and Undoped Epitaxial Surface Layers for MMIC Applications
• Scatterings of Shallow Threshold Voltage on Si-Implanted WN Self-Alignment Gate GaAs Metal-Semiconductor Field-Effect Transistors on Different Composition 2-Inch Substrates by Growing in Three Kinds of Furnaces
• Microstructural Observation of Si_Ge_x Thin Films Prepared by Pulsed Ion-Beam Evaporation
• Preparation of Polycrystalline Silicon Thin Films by Pulsed Ion-Beam Evaporation
• Preparation of Polycrystalline Silicon Thin Films by Pulsed Ion-Beam Evaporation
• 0.25 μm Electron Beam Direct Writing Techniques for 256 Mbit Dynamic Random Access Memory Fabrication
• Application of KrF Excimer Laser Lithography to 256Mb DRAM Fabrication (Special Issue on LSI Memories)
• A Self-Aligned Gate AlGaAs/GaAs Heterostructure Field-Effect Transistor with an Ion-Implanted Buried-Channel for use in High Efficiency Power Amplifiers

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