A 2-V Operation Resonant-Type T/R-Switch with Low Distortion Characteristics for 1.9-GHz PHS(Special Issue on Microwave and Millimeter-Wave Module Technology)

概要

論文の詳細を見る
Two approaches to the design of resonant-type switches with low distortion characteristics operating at a 2-V power supply voltage have been proposed for use in the 1.9-GHz-band personal handy phone system(PHS). One approach is to use three stacked FETs at the receiver side. They are composed of a dual-gate FET and a single-gate FET. An insertion loss of 0.41 dB and an isolation of 44.0 dB were obtained at 1.9GHz. A third-order distortion value of -52dBc was achieved at 19 dBm output power. Another approach is to insert a capacitor in the resonator. A third-order distortion of -49dBc at 19-dBm output power when two stacked FETs were used at the receiver side. The layout area of the resonator is drastically reduced as compared with the above-mentioned case.
社団法人電子情報通信学会の論文
1998-06-25