Ultralow-Voltage MTCMOS/SOI Circuits for Batteryless Mobile System(<Special Section>Low-Power System LSI, IP and Related Technologies)
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概要
- 論文の詳細を見る
This paper describes an ultralow-power multi-threshold (MT) CMOS/SOI circuit technique that mainly uses fully-depleted MOS FETs. The MTCMOS/SOI circuit, which combines fully-depleted low- and medium-Vth CMOS/SOI logic gates and high-Vth power-switch transistors, makes it possible to lower the supply voltage to 0.5 V and reduce the power dissipation of LSIs to the 1-mW level. We overview some MTCMOS/SOI digital and analog components, such as a CPU, memory, analog/RF circuit and DC-DC converter for an ultralow-power mobile system. The validity of the ultralow-voltage MTCMOS/SOI circuits is confirmed by the demonstration of a self-powered 300-MHz-band short-range wireless system. A 1-V SAW oscillator and a switched-capacitor-type DC-DC converter in the transmitter makes possible self-powered transmission by the heat from a hand. In the receiver, a 0.5-V digital controller composed of a 8-bit CPU, 256-kbit SRAM, and ROM also make self-powered operation under illumination possible.
- 社団法人電子情報通信学会の論文
- 2004-04-01
著者
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KAMEYAMA Atsushi
Toshiba Research and Development Center
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Matsuzawa A
Tokyo Institute Of Technology
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Matsuzawa Akira
Tokyo Institute Of Technology
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KYURAGI Hakaru
NTT Microsystem Integration Laboratories
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DOUSEKI Takakuni
NTT Microsystem Integration Laboratories, NTT Corporation
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Douseki Takakuni
Ntt Microsystem Integration Laboratories Ntt Corporation
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MOGAMI Tohru
Silicon Systems Research Laboratories, NEC Corporation
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Mogami Tohru
Silicon Systems Research Laboratories Nec Corporation
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Kyuragi Hakaru
Ntt Microsystem Integration Laboratories Ntt Corporation
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Baba Shunsuke
Oki Electric Industry Co. Ltd.
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YONEMARU Masashi
Sharp Corporation
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IKUTA Eiji
Sharp Corporation
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Kameyama Atsushi
Toshiba Corporation Semiconductor Company
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Matsuzawa Akira
Tokyo Inst. Of Technol. Tokyo Jpn
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