A Self-Aligned Gate AlGaAs/GaAs Heterostructure Field-Effect Transistor with an Ion-Implanted Buried-Channel for use in High Efficiency Power Amplifiers

スポンサーリンク

概要

著者

関連論文

A Resonant-Type GaAs Switch IC with Low Distortion Characteristics for 1.9GHz PHS (Special Issue on Microwave and Millimeterwave High-power Devices)
A Monolithic GaAs Linear Power Amplifier Operating with a Single Low 2.7-V Supply for 1.9-GHz Digital Mobile Communication Applications
Refractory WN_x/W Self-Aligned Gate GaAs Power Metal-Semiconductor Field-Effect Transistor for 1.9-GHz Digital Mobile Communication System Operating with a Single Low-Voltage Supply
Design Study on RF Stage for Miniature PHS Terminal (Special Issue on Microwave Devices for Mobile Communications)
Single 3-V Supply Operation GaAs Linear Power MESFET Amplifier for 5.8-GHz ISM Band Applications (Special Issue on Microwave and Millimeter Wave Technology)
0.012-cc Miniaturized GaAs P-Pocket Power MESFET Amplifier Operating with a Single Voltage Supply for PHS Applications
Single Low 2.4-V Supply Operation GaAs Power MESFET Amplifier with Low-Distortion Gain-Variable Attenuator for 1.9-GHz PHS Applications(Special Issue on Microwave and Millimeter-Wave Module Technology)
A 2-V Operation Resonant-Type T/R-Switch with Low Distortion Characteristics for 1.9-GHz PHS(Special Issue on Microwave and Millimeter-Wave Module Technology)
A Self-Aligned Gate AlGaAs/GaAs Heterostructure Field-Effect Transistor with an Ion-Implanted Buried-Channel for use in High Efficiency Power Amplifiers
A Buried-Channel Self-Aligned GaAs MESFET with High Power-Efficiency and Low Noise-Figure for 1.9-GHz Single-Chip Front-End MMICs (Special Issue on Low-Power and High-Speed LSI Technologies)
Gate Current Control Method by Pull-Down FET's for 0-28dB GaAs Variable Attenuator in Direct-Conversion Modulator IC for 1.9GHz PHS (Special Issue on Microwave and Millimeterwave High-power Devices)
A Buried-Channel WN_x/W Self-Aligned GaAs MESFET with High Power-Efficiency and Low Noise-Figure for Single-Chip Front-End MMIC in Personal Handy Phone System
Buried-Channel WN_x/W Self-Aligned GaAs MESFET Process with Selectively Implanted Channel and Undoped Epitaxial Surface Layers for MMIC Applications
Scatterings of Shallow Threshold Voltage on Si-Implanted WN Self-Alignment Gate GaAs Metal-Semiconductor Field-Effect Transistors on Different Composition 2-Inch Substrates by Growing in Three Kinds of Furnaces
Microstructural Observation of Si_Ge_x Thin Films Prepared by Pulsed Ion-Beam Evaporation
Preparation of Polycrystalline Silicon Thin Films by Pulsed Ion-Beam Evaporation
Preparation of Polycrystalline Silicon Thin Films by Pulsed Ion-Beam Evaporation
Nonlinear Conductivity of Poly(3-methylthiophene) under a Low Electric Field in the Low Frequency Range : Electrical Properties of Condensed Matter
A Flexible Search Managing Circuitry for High-Density Dynamic CAMs (Speial Section on High Speed and High Density Multi Functional LSI Memories)
A Bitline Control Circuit Scheme and Redundancy Technique for High-Density Dynamic Content Addressable Memories (Special Issue on LSI Memories)
Photoconduction in Poly(p-Phenylene Sulfide) Films near the Absorption Edge : Chemistry (incl. physical process)
Spectral Distribution of Photocurrent near the Absorption Edge : Optical Properties of Condensed Matter
Synthesis and Mesomorphic Properties of 1, 10-Dialkylpermethyldecasilanes
Liquid Crystalline Behavior of Linear Permethyloligosilanes
Liquid Crystalline Oligosilanes with Alkoxybiphenyl Groups
Photochromic Property of Triphenylformazan Films Prepared by Vacuum Evaporation
A Self-Aligned Gate AlGaAs/GaAs Heterostructure Field-Effect Transistor with an Ion-Implanted Buried-Channel for use in High Efficiency Power Amplifiers

もっと見る

スポンサーリンク