Buried-Channel WN_x/W Self-Aligned GaAs MESFET Process with Selectively Implanted Channel and Undoped Epitaxial Surface Layers for MMIC Applications
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-02-28
著者
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Uchitomi N
Research And Development Center Toshiba Corp.
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Uchitomi Naotaka
Ulsi Laboratories Toshiba Research And Development Center
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KITAURA Yoshiaki
ULSI Laboratories, Toshiba Research and Development Center
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Nagaoka M
Research And Development Center Toshiba Corp.
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Nishihori K
Toshiba Corp. Kawasaki‐shi Jpn
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Nishihori Kazuya
Ulsi Research Center Toshiba Corporation
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Kitaura Y
Research And Development Center Toshiba Corp.
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Kitaura Yoshiaki
Ulsi Laboratories Toshiba Research And Development Center
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MIHARA Masakatsu
Research and Development Center, Toshiba Corp.
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HIROSE Mayumi
Research and Development Center, Toshiba Corporation
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HIROSE Mayumi
ULSI Research Laboratories, TOSHIBA CORPORATION
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NAGAOKA Masami
ULSI Research Laboratories, Toshiba Corporation
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TANABE Yoshikazu
ULSI Research Laboratories, Toshiba Corporation
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MIHARA Masakatsu
ULSI Research Laboratories, Toshiba Corporation
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YOSHIMURA Misao
ULSI Research Laboratories, Toshiba Corporation
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Tanabe Y
Tokyo Inst. Of Technol. Yokohama‐shi
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吉村 昌弘
Division Of Electric Electronic And Information Engineering Graduate School Of Engineering Osaka Uni
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Mihara Masakatsu
Research And Development Center Toshiba Corp.
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Tanabe Y
Hiroshima Univ. Higashihiroshima Jpn
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Tanabe Yoshikazu
Research And Development Center Toshiba Corp.
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Hirose M
Ntt Electronics Ebina‐shi Jpn
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