Damage Formed by Si^+ Implantation in GaAs

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Reflow of PSG Layers by Halogen Lamp Short Duration Heating Technique
Low Resistance Al/Si Ohmic Contacts on Boron Implanted Shallow p^+ Si Layers Formed by Halogen Lamp Annealing
Contact Resistance of Al/Si Ohmic Electrodes Formed by Rapid Lamp Sintering.
Damage Formed by Si^+ Implantation in GaAs
Rapid Heating Reflow of Phosphosilicate Glass Enhanced by As Ion Implantation
Barrier Effects of Tungsten Infer-Layer for Aluminum Diffusion in Aluminum/Silicon Ohmic-Contact System
Properties of Titanium Layers Deposited by Collimation Sputtering
Gate Current Control Method by Pull-Down FET's for 0-28dB GaAs Variable Attenuator in Direct-Conversion Modulator IC for 1.9GHz PHS (Special Issue on Microwave and Millimeterwave High-power Devices)
A Buried-Channel WN_x/W Self-Aligned GaAs MESFET with High Power-Efficiency and Low Noise-Figure for Single-Chip Front-End MMIC in Personal Handy Phone System
Buried-Channel WN_x/W Self-Aligned GaAs MESFET Process with Selectively Implanted Channel and Undoped Epitaxial Surface Layers for MMIC Applications
Scatterings of Shallow Threshold Voltage on Si-Implanted WN Self-Alignment Gate GaAs Metal-Semiconductor Field-Effect Transistors on Different Composition 2-Inch Substrates by Growing in Three Kinds of Furnaces
Mobility Profiles in Self-Aligned WN_X Undoped AlGaAs/n-GaAs/Undoped AlGaAs Doped-Channel Hetero-MISFETs
Mobility Profiles in Submicron WN_x-BPLDD-GaAs MESFETs
Stress in Al-Sc Interconnection Layers
Silicidation Reaction and Stress in Ti/Si
Formation of Titanium Nitride/Titanium Silicide by High Pressure Nitridation in Titanium/Silicon
Properties of Titanium Nitride Films for Barrier Metal in Aluminum Ohmic Contact Systems
Damage Formed on Silicon Surface by Helicon Wave Plasma Etching
Barrier Properties for Oxygen Diffusion in a TaSiN Layer
Damage Induced by Electron Cyclotron Resonance Plasma Etching on Silicon Surface
Dose and Damage Measurements in Low Dose Ion Implantation in Silicon by Photo-Acoustic Displacement and Minority Carrier Lifetime
Measurement of the Delamination of Thin Silicon and Silicon Carbide Layers by the Multi-Wavelength Laser Ellipsometer
Carbon Ion Implantation in GaAs
Thermal Stability in Al/Ti/GaAs Schottky Barrier
Damage Formed by Plasma Boron Doping in Silicon
Thermal Stability and Interfacial Reaction of Barrier Layers with Low-Dielectric-Constant Fluorinated Carbon Interlayer
Interfacial Reaction in Polycide MOS Gate Structure Employing CVD Tungsten Silicide
Capless Rapid Thermal Annealing of Silicon Ion Implanted Gallium Arsenide
Resistivity of Thin Copper Interconnection Layers
Damage Depth Profiles in Jon-Implanted Silicon by the Photoacoustic Displacement Technique

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