Resistivity of Thin Copper Interconnection Layers
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概要
- 論文の詳細を見る
Resistivity is observed quantitatively in a thin electroplated copper layer. A resistivity of 2.6 μ$\Omega$$\cdot$cm is observed in a 600-nm-thick as-deposited copper layer by conventional electroplating. This resistivity increases rapidly with decreasing thickness and reaches 7.8 μ$\Omega$$\cdot$cm at a thickness of 75 nm. This rapid increase is mainly due to the increase in the orientation ratio of the copper (111)/(200). The resistivity in the as-deposited layer is maintained at 2.2 μ$\Omega$$\cdot$cm in a 75 nm low resistivity layer with a low orientation ratio. Such a low-resistivity thin layer is electroplated practically by newly developed process. The preparation of a low-stress seed layer is also required in this electroplating process.
- Japan Society of Applied Physicsの論文
- 2005-03-10
著者
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Hara Tohru
Electrical Engineering Hosei University
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Shimura Yasu
Electrical Engineering, Hosei University, Kajinocho, Koganei, Tokyo 184-0002, Japan
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Hara Tohru
Electrical Engineering, Hosei University, Kajinocho, Koganei, Tokyo 184-0002, Japan
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Namiki Ken
Electrical Engineering, Hosei University, Kajinocho, Koganei, Tokyo 184-0002, Japan
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