Damage Depth Profiles in Jon-Implanted Silicon by the Photoacoustic Displacement Technique
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概要
- 論文の詳細を見る
Damage density measurement for ion-implanted silicon is studied, where the density is measured using Rutherford backscattering spectrometry (RBS) and a newly developed photoacoustic displacement (PAD) technique. Since correlation is obtained between the observed PAD and quantitative damage density in ion-implanted silicon at 150 keV at a dose of 2.0×10^<15> ions/cm^2, damage density can be determined quantitatively from the PAD measurement at the surface. A damage density depth profile can also be obtained using the differential PAD measurement. The observed profile agrees well with the ones of the displaced atom density obtained by RBS measurement and Monte Carlo simulation.
- 社団法人応用物理学会の論文
- 1993-06-15
著者
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Hara Tohru
Electrical Engineering Hosei University
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MURAKI Takeshi
Electrical Engineering, Hosei University
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Takeda Satoru
Electrical Engineering Hosei University
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Muraki Takeshi
Electrical Engineering Hosei University
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SAKURAI Masataka
Electrical Engineering, Hosei University
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