Thermal Stability and Interfacial Reaction of Barrier Layers with Low-Dielectric-Constant Fluorinated Carbon Interlayer
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概要
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The thermal stability of low-dielectric-constant(ε)interlayers for advanced ULSI's is studies. Thickness decreases by 7 and 4% with annealing from 390 to 450°C in poly-arylether and hydro-organo-siloxane polymer layers. The thickness variation is as low as 2% in the carbon-rich fluorinated carbon(FC)(F/C=0.90)layer at temperatures between 250 and 450°C. The composition of F/C decreases markedly with the increase of temperature above 450°C in high F/C composition, such as 1.20 and 1.28, FC layers. However, this composition is invariable with annealing at 450°C in layers with low F/C composition(F/C=0.90)because F does not leave the F-C bond in this layer. The barrier effect for a FC low ε interlayer is studied in titanium nitride(TiN)and tantalum nitride(TaN)barrier layers. When polycrystalline TiN and TaN barrier layers are used, significant interfacial reaction occurs at low temperatures. That is, Ti and Ta of TiN and TaN layers diffuse deeply into the FC layer at 350°C. Penetration of F from the FC layer into these barrier layers occurs respectively at 450°C. However, diffusion of Ta and F into FC and TaN can be suppressed if a microcrystaline TaN(TaN_<0.90>)barrier layer is used ; such a N-rich microcrystalline TaN layer can be deposited by reactive sputtering.
- 社団法人応用物理学会の論文
- 2000-06-01
著者
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Evans David
Sharp Laboratories Of America Inc.
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Hara Tohru
Electrical Engineering Hosei University
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SAKAMOTO Keiichi
Electrical Engineering, Hosei University
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TOGOH Fumiaki
Electrical Engineering, Hosei University
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YANG Hongning
Sharp Laboratories of America, Inc.
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Sakamoto Keiichi
Electrical Engineering Hosei University
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Togoh Fumiaki
Electrical Engineering Hosei University
-
Yang Hongning
Sharp Laboratories Of America Inc.
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