Fabrication and Characterization of Sub-Micron Metal-Ferroelectric-Insulator-Semiconductor Field Effect Transistors withPt/Pb_5Ge_3O_<11>/ZrO_2/Si Structure : Surfaces, Interfaces, and Films
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2001-06-15
著者
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Evans David
Sharp Laboratories Of America Inc.
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Evans D
Sharp Laboratories Of America Inc.
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Hsu S
Sharp Lab. America Inc. Wa Usa
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Ulrich Bruce
Sharp Laboratories Of America Inc.
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HSU Sheng
Sharp Laboratories of America, Inc.
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STECKER Lisa
Sharp Laboratories of America, Inc.
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ZHANG Fengyan
Sharp Laboratories of America, Inc.
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ONO Yoshi
Sharp Laboratories of America, Inc.
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ZHUANG Weiwei
Sharp Laboratories of America, Inc.
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YING Hong
Sharp Laboratories of America, Inc.
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MAA Jershen
Sharp Laboratories of America, Inc.
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Hsu Sheng
Sharp Microelectronics Laboratory
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Ono Y
Fuji Xerox Co. Ltd. Kanagawa Jpn
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Ying Hong
Sharp Laboratories Of America Inc.
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Maa Jershen
Sharp Laboratories Of America Inc.
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Stecker Lisa
Sharp Laboratories Of America Inc.
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Zhuang Weiwei
Sharp Laboratories Of America Inc.
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Zhang Fengyan
Sharp Laboratories Of America Inc.
関連論文
- One Transistor Ferroelectric Memory Devices with Improved Retention Characteristics
- Fabrication and Characterization of Sub-Micron Metal-Ferroelectric-Insulator-Semiconductor Field Effect Transistors withPt/Pb_5Ge_3O_/ZrO_2/Si Structure : Surfaces, Interfaces, and Films
- Phase and Microstructure Analysis of Lead Germanate Thin Film Deposited by Metalorganic Chemical Vapor Deposition
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- One Transistor Ferroelectric Memory Devices with Improved Retention Characteristics
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