Studies of Ir-Ta-O as High Temperature Stable Electrode Material and Its Application for Ferroelectric SrBi_2Ta_2O_9 Thin Film Deposition

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1999-12-01

著者

• Hsu S

  Sharp Lab. America Inc. Wa Usa

• HSU Sheng

  Sharp Laboratories of America, Inc.

• ZHANG Fengyan

  Sharp Laboratories of America, Inc.

• Hsu Sheng

  Sharp Microelectronics Laboratory

• Zhang Fengyan

  Sharp Laboratories Of America Inc.

• Ohnishi S

  Nec Fundamental Res. Lab. Ibaraki Jpn

• Ohnishi Shigeo

  Sharp Corporation

• Zhen Wendong

  Sharp Corporation

• MAA Jer-shen

  Sharp Laboratories of America, Inc.

• Maa J‐s

  Sharp Microelectronics Lab. Washington Usa

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• Phase and Microstructure Analysis of Lead Germanate Thin Film Deposited by Metalorganic Chemical Vapor Deposition
• Studies of Ir-Ta-O as High Temperature Stable Electrode Material and Its Application for Ferroelectric SrBi_2Ta_2O_9 Thin Film Deposition
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