Fabrication of Submicron IrO2 Nanowire Array Biosensor Platform by Conventional Complementary Metal–Oxide–Semiconductor Process
スポンサーリンク
概要
- 論文の詳細を見る
To explore the most dynamic cross field of nanotechnology and life science, and to find a more practical method of fabricating nanodevices on a very large scale with advantages of low manufacturing cost, high reliability and reproducibility, we successfully fabricated a submicron IrO2 nanowire array biosensor platform by conventional complementary metal–oxide–semiconductor (CMOS) process. Single crystal IrO2 nanowire array was grown uniformly on a 6-in. wafer surface by chemical vapor deposition (CVD) method and patterned into submicron array clusters. The obtained clusters were positioned in a designed pattern similar to a multiple electrode array (MEA) format, and each was individually addressed. The fabrication method was found to be reliable, low cost and robust. The final chip showed excellent transparency, functionality and durability.
- 2008-02-25
著者
-
Ulrich Bruce
Sharp Laboratories Of America Inc.
-
Hsu Sheng-teng
Sharp Laboratories Of America Inc.
-
Zhang Fengyan
Sharp Laboratories Of America Inc.
-
Hsu Sheng-Teng
Sharp Laboratories of America, Inc., 5700 NW Pacific Rim Blvd., Camas, WA 98607, U.S.A.
-
Reddy Ravi
Department of Electrical and Computer Engineering, Portland State University, 1900 SW 4th Ave., Portland, OR 97201, U.S.A.
-
Venkatraman Vinu
Department of Electrical and Computer Engineering, Portland State University, 1900 SW 4th Ave., Portland, OR 97201, U.S.A.
-
Prasad Shalini
Department of Electrical and Computer Engineering, Portland State University, 1900 SW 4th Ave., Portland, OR 97201, U.S.A.
-
Vu Tania
Department of Biomedical Engineering, Oregon Health and Science University, 3303 SW Bond Ave., 13B, Portland, OR 97239, U.S.A.
-
Zhang Fengyan
Sharp Laboratories of America, Inc., 5700 NW Pacific Rim Blvd., Camas, WA 98607, U.S.A.
関連論文
- One Transistor Ferroelectric Memory Devices with Improved Retention Characteristics
- Fabrication and Characterization of Sub-Micron Metal-Ferroelectric-Insulator-Semiconductor Field Effect Transistors withPt/Pb_5Ge_3O_/ZrO_2/Si Structure : Surfaces, Interfaces, and Films
- Phase and Microstructure Analysis of Lead Germanate Thin Film Deposited by Metalorganic Chemical Vapor Deposition
- Studies of Ir-Ta-O as High Temperature Stable Electrode Material and Its Application for Ferroelectric SrBi_2Ta_2O_9 Thin Film Deposition
- Synthesis of Metallic Iridium Oxide Nanowires via Metal Organic Chemical Vapor Deposition
- Fabrication of Submicron IrO2 Nanowire Array Biosensor Platform by Conventional Complementary Metal–Oxide–Semiconductor Process
- One Transistor Ferroelectric Memory Devices with Improved Retention Characteristics