One Transistor Ferroelectric Memory Devices with Improved Retention Characteristics

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2002-11-30

著者

• Evans David

  Sharp Laboratories Of America Inc.

• Evans D

  Sharp Laboratories Of America Inc.

• Hsu S

  Sharp Lab. America Inc. Wa Usa

• Ulrich Bruce

  Sharp Laboratories Of America Inc.

• LI Tingkai

  Sharp Laboratories of America, Inc.

• HSU Sheng

  Sharp Laboratories of America, Inc.

• STECKER Lisa

  Sharp Laboratories of America, Inc.

• EVANS Dave

  Sharp Laboratories of America, Inc.

• Li Tingkai

  Sharp Laboratories Of America Inc.

• Hsu Sheng

  Sharp Microelectronics Laboratory

• Stecker Lisa

  Sharp Laboratories Of America Inc.

関連論文

• One Transistor Ferroelectric Memory Devices with Improved Retention Characteristics
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• Fabrication of Submicron IrO2 Nanowire Array Biosensor Platform by Conventional Complementary Metal–Oxide–Semiconductor Process
• Thermal Stability and Interfacial Reaction of Barrier Layers with Low-Dielectric-Constant Fluorinated Carbon Interlayer
• One Transistor Ferroelectric Memory Devices with Improved Retention Characteristics

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