Advanced Ti Silicide Technology with Buffer Thin Al Layer
スポンサーリンク
概要
- 論文の詳細を見る
- 1997-09-16
著者
-
MAA Jer-shen
Sharp Laboratories of America, Inc.
-
Maa Jer-shen
Sharp Microelectronics Technology Inc.
-
KISHI A.
VLSI Development Laboratories, IC Group, SHARP Corporation
-
DOI T.
VLSI Development Laboratories, IC Group, SHARP Corporation
-
OHNISI S.
VLSI Development Laboratories, IC Group, SHARP Corporation
-
IGUTI K.
VLSI Development Laboratories, IC Group, SHARP Corporation
-
SAKIYAMA K.
Process Development Center, IC Group, SHARP Corporation
-
HSU S.
Sharp Microelectronics Technology, Inc.
-
Iguti K.
Vlsi Development Laboratories Ic Group Sharp Corporation
-
Sakiyama K.
Process Development Center Ic Group Sharp Corporation
-
Ohnisi S.
Vlsi Development Laboratories Ic Group Sharp Corporation
-
Kishi A.
Vlsi Development Laboratories Ic Group Sharp Corporation
関連論文
- Studies of Ir-Ta-O as High Temperature Stable Electrode Material and Its Application for Ferroelectric SrBi_2Ta_2O_9 Thin Film Deposition
- The Effect of Al Interlayer on TiSi_2 Formation
- Advanced Ti Silicide Technology with Buffer Thin Al Layer