Thin Gate Dielectric Materials Grown in Mixtures of N_2O and O_2 : Electrical Characteristics and Interfacial Nitrogen Concentration

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概要

• 論文の詳細を見る
• 1995-05-25

著者

• ONO Yoshi

  Sharp Laboratories of America, Inc.

• Ono Yoshi

  Sharp Microelectronics Technology Inc.

• Grant John

  Sharp Microelectronics Technology Inc.

関連論文

• Fabrication and Characterization of Sub-Micron Metal-Ferroelectric-Insulator-Semiconductor Field Effect Transistors withPt/Pb_5Ge_3O_/ZrO_2/Si Structure : Surfaces, Interfaces, and Films
• Thin Gate Dielectric Materials Grown in Mixtures of N_2O and O_2 : Electrical Characteristics and Interfacial Nitrogen Concentration
• Post-Gate Oxidation Treatments that Improve the Reliability of Thin Rapid Thermal Processed Oxides

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