Damage Formed by Plasma Boron Doping in Silicon
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概要
- 論文の詳細を見る
Damage formed by DC plasma doping of boron to silicon is studied. Damage density is measured by 1.5 MeV He^+ Rutherford backscattering spectrometry and photoacoustic displacement techniques. These damage density measurements show that lower-damage doping can be achieved in plasma doping compared with that of ion implantation. Impurity diffusion does not occur as rapidly in this doping as seen in B^+ and BF^+_2 implantations. The diffusion coefficient of boron is as low as 4.9×10^<-15> cm^2/s at 950℃ in this doping. This coefficient is 5 and 40 times lower than that of B^+ and BF^+_2 implantations, respectively. Correlation of the diffusion coefficient with damage density is found. A shallow and high peak carrier concentration p^+ layer can be formed by plasma boron doping.
- 社団法人応用物理学会の論文
- 1994-10-15
著者
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Hara Tohru
Electrical Engineering Hosei University
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SHINADA Kiyotaka
Electrical Engineering, Hosei University
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NAKAMURA Shigeaki
M SETEK Co., Ltd.
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Nakamura Shigeaki
M Setek Co. Ltd.
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Shinada Kiyotaka
Electrical Engineering Hosei University
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