Thermal Stability in Al/Ti/GaAs Schottky Barrier

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概要

• 論文の詳細を見る

• Interfacial reaction occurs at the Al/Ti interface in the Al/Ti/GaAs Schottky barrier at low temperatures. Therefore, the barrier layer is required between Al and Ti layers to manufacture thermally stable Al/Ti/GaAs Schottky gates in metal semiconductor field effect transistors (MESFET's). In this study, a double layer of Ti_2Ga_3 and TiAs is formed by interfacial reaction at the Ti (30 nm thick)/GaAs interface at 450℃. In the double layer, Ti_2Ga_3 is employed as the barrier layer for Al and the TiAs layer as the Schottky electrode with high barrier height. Interfacial reaction does not occur at the Al/Ti_2Ga_3 interface with annealing at 450℃ and a thermally stable Al/Ti_2Ga_3/TiAs/GaAs Schottky gate can be obtained by employing the Ti_2Ga_3 barrier layer formed by this interfacial reaction. Moreover, barrier height can be increased by 0.12 eV in the TiAs/GaAs Schottky gate from that of the Ti/GaAs gate. We describe the barrier effect of the Ti_2Ga_3 layer for Al.

• 社団法人応用物理学会の論文
• 1995-07-01

著者

• HARA Tamio

  Toyota Technological Institute

• HARA Tohru

  Electrical Engineering, Hosei University

• Zhu Jian

  Electrical Engineering Hosei University

• Hara T

  Toyota Technological Inst. Nagoya Jpn

• Hara Tohru

  Electrical Engineering Hosei University

• Higashisaka Asamitsu

  Ulsi Device Development Laboratories Nec Corporation

• Mochizuki A

  Tohoku Univ. Sendai‐shi Jpn

• MOCHIZUKI Akira

  ULSI Device Development Laboratories, NEC Corporation

• KOHZU Hideaki

  ULSI Device Development Laboratories, NEC Corporation

• ASAI Syuji

  ULSI Device Development Laboratories, NEC Corporation

• Kohzu Hideaki

  Ulsi Device Development Laboratories Nec Corporation

• Asai S

  Ulsi Device Development Laboratories Nec Corporation

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