Induced Defects in GaAs Etched by Low Energy Ions in Electron Beam excited Plasma(EBEP) System : Etching and Deposition Technology
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1989-12-30
著者
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Namba S
Inst. Physical And Chemical Research Wako
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HARA Tamio
Toyota Technological Institute
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Aoyagi Y
Inst. Physics And Chemical Res. (riken) Wako Jpn
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Aoyagi Y
Semiconductor Laboratory Riken The Institute For Physical And Chemical Research
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Hara T
Toyota Technological Inst. Nagoya Jpn
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Masui Norio
Faculty Of Engineering Science Osaka University
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Namba Susumu
Faculty Of Engineering Science And Research Center For Extreme Materials Osaka University
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Namba Susumu
Nagasaki Institute Of Applied Science
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GAMO Kenji
Faculty of Engineering Science, Osaka University
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YUBA Yoshihiko
Faculty of Engineering Science, Osaka University
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Aoyagi Yoshinobu
Riken
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Gamo Kenji
Faculty Of Engineering Science And Research Center For Extreme Materials Osaka University
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HAMAGAKI Manabu
RIKEN, The Institute of Physical and Chemical Research
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HARA Tamio
RIKEN, The Institute of Physical and Chemical Research
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Yuba Yoshihiko
Faculty Of Engineering Science Osaka University
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Aoyagi Yoshinobu
Nanoelectronic Materials Laboratory Frontier Research Program Riken
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Aoyagi Y
The Institute Of Physical And Chemical Research
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Namba Susumu
Research Center For Extreme Materials And Department Of Electrical Engineering Osaka University
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Namba Susumu
Frontier Research Program Riken
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Jin-Zhong YU
Institute of Semicinductors, Chinese Academy of Sciences
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NAMBU Susumu
Faculty of Engineering Science, Osaka university
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Hamagaki M
The Institute Of Physical And Chemical Research (riken)
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Hamagaki Manabu
Akashi Technical Institute Kawasaki Heavy Industries
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Jin-zhong Yu
Institute Of Semicinductors Chinese Academy Of Sciences
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Nagatomo S
Shizuoka Univ. Shizuoka Jpn
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Hamagaki Manabu
Riken
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Namba S
Riken The Institute Of Physical And Chemical Research
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NAMBA Susumu
Research Center for Extreme Materials and Department of Electrical Engineering, Osaka University
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