40 nm Width Structure of GaAs Fabricated by Fine Focused Ion Beam Lithography and Chlorine Reactive Ion Etching : Techniques, Instrumentations and Measurement
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1988-06-20
著者
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Kim Pil
Riken The Institute Of Physical And Chemical Research
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HARA Tamio
Toyota Technological Institute
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Aoyagi Y
Interdisciplinary Graduate School Of Science & Engineering Tokyo Institute Of Technology
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Aoyagi Y
Inst. Physics And Chemical Res. (riken) Wako Jpn
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Hara T
Toyota Technological Inst. Nagoya Jpn
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Namba S
Japan Atomic Energy Res. Inst. Kyoto Jpn
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Namba Susumu
Riken The Institute Of Physical And Chemical Research
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Aoyagi Yoshinobu
Riken
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TOYODA Koichi
RIKEN, The Institute of physical and Chemical Research
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SHIOKAWA Takao
RIKEN, The Institute of Physical and Chemical Research
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HAMAGAKI Manabu
RIKEN, The Institute of Physical and Chemical Research
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HARA Tamio
RIKEN, The Institute of Physical and Chemical Research
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Sakamoto Toshitugu
Faculty Of Engineering Science Osaka University
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Kim P
Riken The Institute Of Physical And Chemical Research
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Hamagaki M
The Institute Of Physical And Chemical Research (riken)
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Hamagaki Manabu
Akashi Technical Institute Kawasaki Heavy Industries
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Shiokawa Takao
Semiconductor Laboratory Riken The Institute For Physical And Chemical Research
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Hamagaki Manabu
Riken
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Namba S
Riken The Institute Of Physical And Chemical Research
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Toyoda Koichi
Riken The Institute Of Physical And Chemical Research
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Namba S
Faculty Of Engineering Osaka University
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- Observation of Gain and Double-pass Amplification of Li-like Al Soft X-ray Transitions in a Recombining Plasma Pumped by a Pulse-train YAG Laser
- Reflow of PSG Layers by Halogen Lamp Short Duration Heating Technique
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- Measurements of Spatial Coherence of Recombination X-Ray Laser
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