The Characteristics of Ion-Beam-Induced Spontaneous Etching of GaAs by Low-Energy Focused Ion Beam Irradiation : Focused Ion Beam Process
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-04-30
著者
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Namba S
Inst. Physical And Chemical Research Wako
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Namba S
Japan Atomic Energy Res. Inst. Kyoto Jpn
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Namba S
Osaka Univ. Osaka
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GAMO Kenji
Research Center for Extereme Materials, Osaka University
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NAMBA Susumu
Research Center for Extereme Materials, Osaka University
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Gamo K
Osaka Univ. Osaka
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Nonoyama Shinji
Quantum Material Research Laboratory Frontier Research Program The Institute Of Physical And Chemica
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Namba Susumu
Research Center For Extreme Materials And Department Of Electrical Engineering Osaka University
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Namba Susumu
Frontier Research Program Riken
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KOSUGI Toshihiro
Department of Electric Engineering, Faculty of Engineering Science, Osaka University
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YAMASHIRO Tomoki
Department of Electric Engineering, Faculty of Engineering Science, Osaka University
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AIHARA Ryuzo
Eiko Engineering Co.Ltd.
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Kosugi Toshihiko
Department Of Electric Engineering Faculty Of Engineering Science Osaka University
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Yamamoto Tokujirou
Department Of Materials Science And Engineering Kyoto University
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Yoshizawa T
Graduate School Of Science And Engineering University Of Toyama
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KOSUGI Toshihiko
NTT Wireless System Laboratories
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Namba S
Riken The Institute Of Physical And Chemical Research
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Namba S
Faculty Of Engineering Osaka University
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Yamamoto Takayoshi
The Institute Of Scientific And Industrial Research Osaka University
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NAMBA Susumu
Research Center for Extreme Materials and Department of Electrical Engineering, Osaka University
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