Local Temperature Rise during Laser Induced Etching of Gallium Arsenide in SiCl_4 Atmosphere
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1985-09-20
著者
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Nakai Hideo
Department Of Industrial Chemistry Tokyo University Of Agriculture And Technology
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Namba S
Japan Atomic Energy Res. Inst. Kyoto Jpn
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Namba Susumu
Faculty Of Engineering Science Osaka University
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Namba Susumu
Faculty Of Engineering Science And Research Center For Extreme Materials Osaka University
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Nakai Hiroyuki
Faculty Of Engineering Science Osaka University
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GAMO Kenji
Faculty of Engineering Science, Osaka University
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TAKAI Mikio
Faculty of Engineering Science, and Research Center for Extreme Materials, Osaka University
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Gamo Kenji
Faculty Of Engineering Science And Research Center For Extreme Materials Osaka University
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Nonoyama Shinji
Quantum Material Research Laboratory Frontier Research Program The Institute Of Physical And Chemica
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Takai Mikio
Faculty Of Engineering Science And Research Center For Extreme Materials (rcem) Osaka University
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Namba S
Riken The Institute Of Physical And Chemical Research
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Tsuchimoto Junichi
Faculty Of Engineering Science Osaka University
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Namba Susumu
Faculty Of Engineering Science And Research Center For Extreme Materials (rcem) Osaka University
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Namba S
Faculty Of Engineering Osaka University
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NAKAI Hiroyuki
Faculty of Agriculture, Niigata University
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