Quantum Transport in PtSi Thin Films and Narrow Wires

概要

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The low-temperature magnetoresistance (MR) of PtSi thin films and narrow wires with 6 nm thickness has been studied to determine the physical parameters in the weak localization with strong spin-orbit interaction, including superconducting fluctuations. We find the magnetic scattering to be negligible in the thin films. For the wires, the obtained magnetic scattering time τ_s is found to decrease with narrowing wire width. This is interpreted as the spin effect due to sidewall damage caused by ion-beam etching. The reduction in T_c with narrowing width has also been deduced, which is qualitatively explained both by the increase of localization which enhances the Coulomb interaction and by the increased magnetic scattering which destroys Cooper pairs.
社団法人日本物理学会の論文
1995-03-15