Thickness Dependence of SiO_2 Capping Layers on Recrystallization of Germanium Islands on Insulator
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概要
- 論文の詳細を見る
The thickness of SiO_2 capping layers has been varied to suppress agglomeration and surface rounding of germanium layers on SiO_2 during zone melting recrystallization. It was found that SiO_2 capping with a thickness of more than 1 μm could suppress agglomeration and surface rounding successfully and most of the islands were single crystalline with flat surfaces. The predominant orientation of germanium islands was found to be (100).
- 社団法人応用物理学会の論文
- 1984-06-20
著者
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Namba Susumu
Faculty Of Engineering Science Osaka University
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GAMO Kenji
Faculty of Engineering Science, Osaka University
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TAKAI Mikio
Faculty of Engineering Science, and Research Center for Extreme Materials, Osaka University
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Gamo Kenji
Faculty Of Engineering Science And Research Center For Extreme Materials Osaka University
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Nonoyama Shinji
Quantum Material Research Laboratory Frontier Research Program The Institute Of Physical And Chemica
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TANIGAWA Takaho
ULSI Device Development Laboratories NEC Corporation
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Tanigawa Takaho
Faculty Of Engineering Science Osaka University
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Takai Mikio
Faculty Of Engineering Science And Research Center For Extreme Materials (rcem) Osaka University
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Namba S
Riken The Institute Of Physical And Chemical Research
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Namba Susumu
Faculty Of Engineering Science And Research Center For Extreme Materials (rcem) Osaka University
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Namba S
Faculty Of Engineering Osaka University
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