Pulse Laser Annealing Effects in Si-Implanted GaAs
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概要
- 論文の詳細を見る
The effects of pulsed ruby and Nd:Glass laser irradiation on the electrical properties of Si-mplanted GaAs were investigated to reveal the reason for the lack of activity in low-dose-implanted samples after pulsed-laser annealing. High electrical activity was observed in a sample implanted at a dose of 10^<15>/cm^2, while no activity was observed in a sample implanted at a dose of less than 10^<14'gt;/cm^2 after the same pulsed laser annealing process. It was found that the ruby laser irradiation of a thermally-annealed sample greatly reduces the carrier concentration and mobility near the surface, while Nd: Glass laser irradiation does not. It is suggested that the surface melting and recrystallization that takes place at a high rate of cooling in pulsed annealing induces defects, giving rise to the lack of activity and low mobility in laser-annealed GaAs.
- 社団法人応用物理学会の論文
- 1984-03-20
著者
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Gamo Kenji
Faculty Of Engineering Science And Research Center For Extreme Materials Osaka University
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Yuba Yoshihiko
Department Of Physical Science Graduate School Of Engineering Science Osaka University
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Yuba Yoshihiko
Faculty Of Engineering Science Osaka University
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Nonoyama Shinji
Quantum Material Research Laboratory Frontier Research Program The Institute Of Physical And Chemica
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Takai Mikio
Faculty Of Engineering Science And Research Center For Extreme Materials (rcem) Osaka University
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Namba S
Riken The Institute Of Physical And Chemical Research
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Namba Susumu
Faculty Of Engineering Science And Research Center For Extreme Materials (rcem) Osaka University
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Namba S
Faculty Of Engineering Osaka University
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Oraby Ahmed
Faculty of Engineering Science, Osaka University
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Oraby Ahmed
Faculty Of Engineering Science Osaka University:(present Address)department Of Physics Faculty Of Sc
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