Maskless Submicrometer Pattern Formation of Cr Films by Focused Sb Ion Implantation
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概要
- 論文の詳細を見る
Maskless submicrometer patterning of Cr films was done by implanting focused Sb^+ ion and by plasma etching using CCl_4 gas. Dose and depth dependence of the etching rate and Sb profiles were measured to investigate the concentration dependence of Sb. The present patterning characteristics are compared with conventional patterning characteristics using Au masks. It was found that a sharp threshold dose exists to form an etch resistant layer and this enables formation of few hundred nanometer thick, submicrometer patterns with vertical side walls. It was also found that the resistivity of patterned Cr films increase only 10%.
- 社団法人応用物理学会の論文
- 1984-08-20
著者
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Gamo Kenji
Faculty Of Engineering Science And Research Center For Extreme Materials Osaka University
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Nonoyama Shinji
Quantum Material Research Laboratory Frontier Research Program The Institute Of Physical And Chemica
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Ochiai Yukinori
Faculty Of Engineering Science Osaka University
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Sakamoto Toshitugu
Faculty Of Engineering Science Osaka University
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Shiokawa Takao
Semiconductor Laboratory Riken The Institute For Physical And Chemical Research
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Minamisono Tadanori
Faculty of Science, Osaka University
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Takai Mikio
Faculty Of Engineering Science And Research Center For Extreme Materials (rcem) Osaka University
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SHIOKAWA Takao
Institute of Physical and Chemical Research
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Namba S
Riken The Institute Of Physical And Chemical Research
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Namba Susumu
Faculty Of Engineering Science And Research Center For Extreme Materials (rcem) Osaka University
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Moriizumi Koichi
Faculty Of Engineering Science Osaka University
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Namba S
Faculty Of Engineering Osaka University
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