Soft-Error Study of DRAMs with Retrograde Well Structure by New Evaluation Method (Special Issue on Quarter Micron Si Device and Process Technologies)
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概要
- 論文の詳細を見る
A new method for the DRAM soft-error evaluation was developed. By using a focused proton microprobe as a radiation source, and scanning it on a memory cell plane, local sensitive structure of memory cells against soft-errors could be investigated with a form of the susceptibility mapping. Cell mode and bit-line mode soft-errors could be clearly distinguished by controlling the incident location and the proton dose, and it was also found that the incident beam within 4 μm around the monitored memory cell caused the soft-error. The retrograde well formed by the MeV ion implantation technology was examined by this method. It was confirmed that the B^+ layers in the retrograde well were a sufficient barrier against the charge collection. The generation rate of the electron-hole pairs and the charge collection into n^+ layers with a retrograde well and a conventional well were estimated by the device simulator, and were explained the experimental results.
- 社団法人電子情報通信学会の論文
- 1994-03-25
著者
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NISHIMURA Tadashi
ULSI Laboratory, Mitsubishi Electric Corporation
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MIYOSHI Hirokazu
ULSI Laboratory, Mitsubishi Electric Corporation
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TAKAI Mikio
Faculty of Engineering Science, and Research Center for Extreme Materials, Osaka University
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Ohno Y
Nagoya Univ. Naogya Jpn
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Ohno Yoshikazu
Ulsi Laboratory Mitsubishi Electric Corporation
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SAYAMA Hirokazu
Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University
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Kimura Hiroshi
ULSI Laboratory, Mitsubishi Electric Corporation
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Sonoda Ken-ichiro
ULSI Laboratory, Mitsubishi Electric Corporation
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Satoh Shin-ichi
ULSI Laboratory, Mitsubishi Electric Corporation
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Hara Shigenori
Faculty of Engineering Science and Research Center for Extreme Materials
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Hara S
Osaka Univ. Suita‐shi Jpn
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Hara S
The Department Of Electronic Information And Energy Engineering Graduate School Of Engineering Osaka
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Hara Shinsuke
The Faculty Of Engineering Osaka University
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Satoh S
Mitsubishi Electric Corp. Hyogo Jpn
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Satoh Shin-ichi
Ulsi Laboratory Mitsubishi Electric Corporation
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Miyoshi Hirokazu
Ulsi Laboratory Mitsubishi Electric Corporation
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Nishimura Tadashi
The Ulsi Development Center Mitsubishi Electric Corporation
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Hara Shinsuke
The Graduate School Of Engineering Osaka University
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Kimura H
Molecular Neuroscience Research Center Shiga University Of Medical Science
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Sayama H
Mitsubishi Electric Corp. Hyogo Jpn
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Sayama Hirokazu
Faculty Of Engineering Science And Research Center For Extreme Materials Osaka University
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Miyoshi H
Mitsubishi Electric Corp.
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Miyoshi Hirokazu
徳島大学医学部
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Kimura Hiroshi
Molecular Neuroscience Research Center Shiga University Of Medical Science
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Takai Mikio
Faculty Of Engineering Science And Research Center For Extreme Materials (rcem) Osaka University
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Sonoda K
Ulsi Development Center Mitsubishi Electric Corporation
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Nishimura Tadashi
Ulsi Development Center Mitsubishi Electric Corporation
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Sonoda Ken-ichiro
ULSI Development Center, Mitsubishi Electric Corporation
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