Bi-Level Structures for Focused Ion Beam Using Maskless Ion Etching
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概要
- 論文の詳細を見る
This paper proposes a bi-level structure for a maskless ion etching using focused ion beam. The bi-level structure can be realized by using a new phenomenon, wherein the Ga^+ doped AZ1450J bottom layer is etched off by a high dose of more than 0.76 μC/cm. A Si top layer with 70 nm linewidth is fabricated. The linewidth can be controlled to nanometer dimensions by changing the dose. Moreover, fine structures with 100 nm are demonstrated using bi-level structures for the substrate etching and lift-off processes.
- 社団法人応用物理学会の論文
- 1984-03-20
著者
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Namba Susumu
The Institute Of Physical And Chemical Research
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Suzuki M
Shizuoka Univ. Hamamatsu
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Mori K
Saga Univ. Saga Jpn
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MATSUI Shinji
Fundamental Res. Labs., NEC Corporation
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MORI Katsumi
Fundamental Research Laboratories, NEC Corporation
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Shiokawa Takao
The Institute of Physical and Chemical Research Wako
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Toyoda Koichi
The Institute of Physical and Chemical Research Wako
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Nonoyama Shinji
Quantum Material Research Laboratory Frontier Research Program The Institute Of Physical And Chemica
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Sakamoto Toshitugu
Faculty Of Engineering Science Osaka University
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Mori K
Department Of Radiological Sciences Ibaraki Prefectural University Of Health Sciences
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Namba S
Riken The Institute Of Physical And Chemical Research
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Toyoda Koichi
The Institute Of Physical And Chemical Research
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Namba S
Faculty Of Engineering Osaka University
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Mori Katsumi
Fundamental Research Laboratories
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Shiokawa Takao
The Institute of Physical and Chemical Research
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