Bi-Level Structures for Focused Ion Beam Using Maskless Ion Etching

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概要

• 論文の詳細を見る

• This paper proposes a bi-level structure for a maskless ion etching using focused ion beam. The bi-level structure can be realized by using a new phenomenon, wherein the Ga^+ doped AZ1450J bottom layer is etched off by a high dose of more than 0.76 μC/cm. A Si top layer with 70 nm linewidth is fabricated. The linewidth can be controlled to nanometer dimensions by changing the dose. Moreover, fine structures with 100 nm are demonstrated using bi-level structures for the substrate etching and lift-off processes.

• 社団法人応用物理学会の論文
• 1984-03-20

著者

• Namba Susumu

  The Institute Of Physical And Chemical Research

• Suzuki M

  Shizuoka Univ. Hamamatsu

• Mori K

  Saga Univ. Saga Jpn

• MATSUI Shinji

  Fundamental Res. Labs., NEC Corporation

• MORI Katsumi

  Fundamental Research Laboratories, NEC Corporation

• Shiokawa Takao

  The Institute of Physical and Chemical Research Wako

• Toyoda Koichi

  The Institute of Physical and Chemical Research Wako

• Nonoyama Shinji

  Quantum Material Research Laboratory Frontier Research Program The Institute Of Physical And Chemica

• Sakamoto Toshitugu

  Faculty Of Engineering Science Osaka University

• Mori K

  Department Of Radiological Sciences Ibaraki Prefectural University Of Health Sciences

• Namba S

  Riken The Institute Of Physical And Chemical Research

• Toyoda Koichi

  The Institute Of Physical And Chemical Research

• Namba S

  Faculty Of Engineering Osaka University

• Mori Katsumi

  Fundamental Research Laboratories

• Shiokawa Takao

  The Institute of Physical and Chemical Research

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