Chalcogenide Amorphous Semiconductor Diodes

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1985-06-20

著者

• HIRAKI Akio

  Department of Electrical Engineering, Faculty of Engineering, Osaka University

• Suzuki M

  Shizuoka Univ. Hamamatsu

• IMURA Takeshi

  Department of Electrical Engineering, Osaka University

• SUZUKI Masakuni

  Department of Obstetrics and Gynecology, Tohoku University School of Medicine

• Hiraki Akio

  Department Of Electrical Engineering Faculty Of Engineering Osaka University

• OKANO Shuichi

  Department of Electrical and Computer Engineering, Kanazawa University

• Hiraki A

  Kochi Univ. Technol. Kochi‐ken Jpn

• Okano S

  Department Of Electrical And Computer Engineering Kanazawa University

• Imura T

  Mitsubishi Paper Mills Ltd.

• Imura T

  Department Of Electrical Engineering Hiroshima University

• Imura Takeshi

  Department Of Electrical Engineering Faculty Of Engineering Osaka University

• Suzuki Masakuni

  Department Of Obstetrics And Gynecology Tohoku University School Of Medicine

• Suzuki Masakuni

  Department Of Electrical And Computer Engineering Faculty Of Technology Kanazawa University

関連論文

• Characterization of Surface Conductive Diamond Layer Grown by Microwave Plasma Chemical Vapor Deposition
• Electrical Properties of Boron-Implanted Homoepitaxial Diamond Films
• Effect of Hydrogen Plasma Treatment on Implantation Damage in Diamond Films Grown by Chemical Vapour Deposition
• Characterization of Homoepitaxial Diamond Films Grown from Carbon Monoxide
• Reactive Ion Beam Etching and Overgrowth Process in the Fabrication of InGaN Inner Stripe Laser Diodes
• Reactive Ion Beam Etching and Overgrowth Process for Fabrication of InGaN Inner Stripe Laser Diodes
• Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire Substrates
• Reduced risk of endometrial cancer from alcohol drinking in Japanese
• Addition of New Pinning Center to Unidirectionally Melt Solidified Y-Ba-Cu-O Superconductor
• Preparation of Y-Ba-Cu-O Superconductors with High Critical Current Density by Unidirectional Melt Solidification
• A Simple Method of Fabricating Preferentially Oriented YBa_2Cu_3O_ Film on Silver Substrates
• Simulation of Rotating Magnetic Field Current Drive Using Multilayer Model
• Measurement of Electron Density and Temperature of Plasma with RF Current Drive by Alfven Wave
• Calcineurin Inhibitor-Induced Irreversible Neuropathic Pain after Allogeneic Hematopoietic Stem Cell Transplantation
• Sensitive Detection of Hydrogen in a-Si: H by Coincidence Measurement of Elastically Scattered 100 MeV ^3He^ Ions and Recoil Protons
• Effects of Plasma Potential on Diamond Deposition at Low Pressure Using Magneto-Microwave Plasma Chemical Vapor Deposition
• Low-Temperature Synthesis of Diamond Films Using Magneto-Microwave Plasma CVD
• The Synthesis of Diamond Films at Lower Pressure and Lower Temperature Using Magneto-Microwave Plasma CVD
• Spectral Fluctuations in the Stokes Output Pulse Pumped with a High-Pressure CO_2 Laser
• Equivalent Circuit Model for Positive/Negative Reflection-Type SAW Reflectors : SAW and BAW Materials, Devices and Theories
• Equivalent Networks for Surface Acoustic Wave Metallic Gratings : SAW and Communication Devices
• Finite-Element Analysis of Periodic Waveguides for Acoustic Waves : SAW and Communication Devices
• FIB Exposure Characteristics of LB Film
• Effects of Growth Parameters on Oxygen Incorporation into InGaAlP Grown by Metalorganic Chemical Vapor Deposition
• Sputtering Yields of Si and Ni from the Ni_Si_x System Studied by Rutherford Backscattering Spectrometry
• Origin of Si(LMM) Auger Electron Emission from Silicon and Si-Alloys by keV Ar^+ Ion Bombardment
• Low Temperature Alloyed Contact Formation in Various Metal-Semiconductor Couples : B-5: COMPOUND SEMICONDUCTOR DEVICE TECHNOLOGY
• Si(LMM) Auger Electron Emission from Si Alloys by keV Ar_+ Ion Bombardment, New Effect and Application
• Heterogeneous nuclear ribonucleoprotein B1 expression in malignant mesothelioma
• Growth of Hydrogenated Germanium Microcrystal by Reactive Sputtering
• Fabrication of Chalcogenide Amorphous Semiconductor Diodes Using Low Temperature Thermal Diffusion Techniques
• Chalcogenide Amorphous Semiconductor Diodes
• Diffusion Profile of Some Metal Ions in Chalcogenide Amorphous Semiconductors
• Evaluation of Fermi-Level in Doped Films of a-SiC:H by X-Ray Photoemission Spectroscopy
• Normal Atmospheric Preparation of YBa_2Cu_4O_8 Superconductor from Nitrate Solution by Freeze-Drying Method
• High-Quality YBa_2Cu_3O_ Ceramics Prepared from Freeze-Dried Nitrates
• Superconducting YBa_2Cu_O_Particles Prepared from Freeze-Dried Nitrates
• Growth and Characterization of Homogeneous YBa_2Cu_3O_ Powders Prepared by a Freeze-Drying Method
• Infrequent existence of simian virus 40 large T antigen DNA in malignant mesothelioma in Japan
• Chronic Lung Abscess with Pasteurella multocida Infection
• Photodoping of Ag into Single Crystal As_2S_3
• Dependence of RF Power on the Content and Configuration of Hydrogen in Amorphous Hydrogenated Silicon by Reactive Sputtering : III-2: AMORPHOUS SOLAR CELLS : Characterization
• Characterization of Hydrogenated Amorphous silicon: Some Behaviors of Hydrogen and Impurities Studied by Film Characterization Techniques : II-1: AMORPHOUS FILM PREPARATION AND CHARACTERIZATION (I)
• Spontaneous Inclusion of Oxygen in Sputter-Deposited Amorphous Silicon during and after Fabrication
• X-Ray Photoelectron and Electron Energy Loss Studies of Si-SiO_2 System: Angular Variation
• A Quantitative Analysis of Electron Enegy Loss Spectra of keV Electrons from Thin-Film-Substrate System
• Electronic Energy States of HfSe_2 and NbSe_2 by Low Energy Electron Loss Spectroscopy Study
• ELS Study of Amorphous Si(Substrate)-SiO_2(Film Overlayer) System with Varying Primary Electron Energy
• Electronic Energy States of Tungsten Dichalcogenides by Low Energy Electron Loss Spectroscopy Study
• Initial Stage of Bias-Enhanced Diamond Nucleation Induced by Microwave Plasma
• Structural Study of Chemical-Vapor-Deposited Diamond Surface by High-Resolution Electron Microscopy
• Improvement in Visible Luminescence Properties of Anodized Porous Silicon by Indium Plating
• Elastic Recoil Detection Analysis for Hydrogen near the Surface of Chemical-Vapor-Deposited Diamond
• Initial Oxidation Process of Anodized Porous Silicon with Hydrogen Atoms Chemisorbed on the Inner Surface : Surfaces, Interfaces and Films
• Ultrasonic Studies of the High-T_c Superconductor YBa_2Cu_3O_y : Physical Acoustics
• Sound Velocity and Attenuation in YBa_2Cu_3O_y : Thermal and Statistical Properties
• Operating Tolerance for Laser Power and Temperature of Phase Change Erasable Optical Disk : Media
• Ge-Te-Sb Based Overwritable Phase Change Optical Disk : PHASE CHANGE MEDIA I
• Metalorganic Vapor Phase Epitaxial Growth for High Electron Mobility Transistor LSIs
• AlGaAs/GaAs and AlGaAs/InGaAs/GaAs High Electron Mobility Transistors Grown by Metalorganic Vapor Phase Epitaxy Using Tertiarybutylarsine
• MOVPE Growth of AlGaAs /GaAs Heterostructures for HEMT LSI
• Electron Affinity of Single-Crystalline Chemical-Vapor-Deposited Diamond Studied by Ultraviolet Synchrotron Radiation
• Observations of the Initial Stage of Chemical-Vapor-Deposited Diamond Growth Using Transmission Electron Microscopy
• Effect of Ambient on the Surface Resistance of Diamond Films during Cooling after Deposition
• Effect of RF Bias on Low-Temperature Synthesis of Aluminium Nitride Film by Hollow Cathode Discharge-Type Ion Plating
• Low-Temperature Synthesis of Aluminium Nitride Film by HCD-Type Ion Plating
• Domain Motion of Ferroelectricity of Bi_2SrTa_2O_9 Single Crystals under an AC-Voltage Electric Field
• Study of Glass Transition in Mn-Doped Ge_Te_ Glass by Electron Spin Resonance
• Characteristics of Mg-Doped GaN and AlGaN Grown by H_2-Ambient and N_2-Ambient Metalorganic Chemical Vapor Deposition
• Ferroelectricity of Bi_2SrTa_2O_9 Single Crystals Grown by the Self-Flux Method
• ESR Study of Glass Transition in Mn-Doped Se_Te_ Chalcogenide Glass in Non-Isothermal Process
• Preparation of Layered Ferroelectric Bi_2SrTa_2O_9 Single-Crystal Platelets
• Optical Gain of Wurtzite GaN/AlGaN Quantum Well Lasers
• Optical Gain Calculation of Wurtzite GaN/AlGaN Quantum Well Laser
• Photoelectron Spectroscopy of EuBa_2Cu_3O_ Thin Film Surfaces Treated by an Electron Cyclotron Resonance Oxygen Ion Beam
• Water-Immersion-Induced Surface Reactiorns of EuBa_2Cu_3O_y Thin Films
• Observation of GaAs(110) Surface by an Ultrahigh-Vacuum Atomic Force Microscope
• Fabrication of Josephson Junctions by Focused Electron Beam Irradiation
• Atomically Resolved Image of Cleaved GaAs(110) Surface Observed with an Ultrahigh Vacuum Atomic Force Microscope
• Initial Stages of GaAs Molecular Beam Epitaxy Growth on Porous Si
• K Emission Spectra of Nontransition Elements Dissolved in Noble or Transition Metals : X-RAY EMISSION SPECTROSCOPY
• Fabrication of Diamond Films at Low Pressure and Low-Temperature by Magneto-Active Microwave Plasma Chermical Vapor Deposition ( Plasma Processing)
• Detailed Study of Si-H Stretching Modes in μc-Si: H Film through Second Derivative IR Spectra
• Light Emission from Microcrystalline Si Confined in SiO_2 Matrix through Partial Oxidation of Anodized Porous Silicon
• Structural and Photoluminescence Characterization of CdS/GaAs Films and CdS-ZnS Strained-Layer Superlattices Grown by Low-Pressure MOCVD Method : III-V Compound Semiconductors Devices and Materials(Solid State Devices and Materials 1)
• Low Temperature Reactions at Si-Metal Contacts : From SiO_2 Growth due to Si-Au Reaction to the Mechanism of Silicide Formation
• Temperature and Composition Dependences on the Electrical Properties of As-grown ZnHgTe Crystals Grown by the Travelling Heater Method : Semiconductors and Semiconductor Devices
• Effect of Annealing on Photoluminescence Properties in Ar^+-Ion Irradiated MOCVD-Grown ZnSe Films : Semiconductors and Semiconductor Devices
• Structural Change of Crystalline Porous Silicon with Chemisorption
• Preparation and Ion-Beam-Induced Luminescence of Thermal CVD Diamond
• Preparation of sp^3-Rich Amorphous Carbon Film by Hydrogen Gas Reactive RF-Sputtering of Graphite, and Its Properties
• Fabrication of Si:H Alloy with Plenty of -SiH_3 by Reactive Sputtering onto Low Temperature Substrate
• Thermal Stability of Electron Field Emission from Polycrystalline Diamond Film(Special Issue on Field Electron Emission from Carbon Materials)
• Stuffing of Noble Metals into Anodized Porous Silicon by Direct Evaporation
• Defect States and Electronic Properties of Post-Hydrogenated CVD Amorphous Silicon
• Bound-Exciton and Edge-Emission Spectra Associated with Li and Na Acceptors in ZnSe
• Effects of Hg Annealing on Photoluminescence Spectra of CdTe Crystals and MOCVD-Grown CdTe/GaAs Films
• Low Temperature Fabrication of Diamond Films with Nanocrystal Seeding
• Luminescent Characteristics of Plasma-Oxidized Porous Silicon
• Visible Photoluminescence from Anodically Oxidized Porous Silicon

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