Low Temperature Fabrication of Diamond Films with Nanocrystal Seeding
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概要
- 論文の詳細を見る
Well-faceted diamond films have heen fabricated at 200℃ on the silicon substrate by the magnetoactive microwave plasma chemical vapor deposition (CVD) method. The substrate was seeded with nanocrystal diamond about 5 nm in diameter synthesized by the explosion process. The nanocrystal seeding brought about the improvement in quality of the fabricated films and the decrease in the time required for diamond nucleation. It took about 5 h to seed the scratched Si substrate at temperatures below 300℃.
- 社団法人応用物理学会の論文
- 1995-03-01
著者
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HATTA Akimitsu
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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ITO Toshimichi
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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HIRAKI Akio
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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Hiraki A
Faculty Of Engineering University Of The Ryukyus
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Hiraki Akio
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Mori H
Osaka Univ. Osaka Jpn
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MAKITA Hiroshi
Kochi University of Technology
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YARA Takuya
Department of Electrical Engineering, Osaka University
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MAKITA Hiroshi
Department of Electrical Engineering, Osaka University
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Yara Takuya
Department Of Electrical Engineering Osaka University
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Mori H
Research Center For Ultra-high Voltage Electron Microscopy Osaka University
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Ito Toshimichi
Department Of Electrical Engineering Faculty Of Engineering Osaka University:cooperative Research Ce
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Ito Toshimichi
Department Of Electrical Electronic And Information Engineering Graduate School Of Engineering Osaka
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Ito Toshimichi
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Makita Hiroshi
Department Of Chemical Engineering Kyoto University
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Hatta Akimitsu
Department Of Electrical Engineering Osaka University:(present Address)department Of Electronic And
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